Part Details for SKT1200/12E by SEMIKRON
Overview of SKT1200/12E by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SKT1200/12E
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SKT1200/12E
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TME | Thyristor: hockey-puck, 1.2kV, 1.2kA, Igt: 250mA, B14 (D74x26) Min Qty: 1 | 0 |
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$941.9500 / $1,048.5500 | RFQ |
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DISTI #
SKT1200/12E
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Richardson RFPD | SCR - PHASE CONTROL THYRISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for SKT1200/12E
SKT1200/12E CAD Models
SKT1200/12E Part Data Attributes
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SKT1200/12E
SEMIKRON
Buy Now
Datasheet
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Compare Parts:
SKT1200/12E
SEMIKRON
Silicon Controlled Rectifier, 2800A I(T)RMS, 1200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AD, HERMETIC SEALED, METAL, CASE B 14, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Part Package Code | BUTTON | |
| Package Description | DISK BUTTON, O-MXDB-X4 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE B 14 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.30.00.80 | |
| Case Connection | ISOLATED | |
| Circuit Commutated Turn-off Time-Nom | 250 µs | |
| Configuration | SINGLE | |
| Critical Rate of Rise of Off-State Voltage-Min | 1000 V/us | |
| DC Gate Trigger Current-Max | 250 mA | |
| DC Gate Trigger Voltage-Max | 5 V | |
| Holding Current-Max | 500 mA | |
| JEDEC-95 Code | TO-200AD | |
| JESD-30 Code | O-MXDB-X4 | |
| JESD-609 Code | e2 | |
| Leakage Current-Max | 100 mA | |
| Non-Repetitive Pk On-state Cur | 30000 A | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| On-state Current-Max | 1200000 A | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| Qualification Status | Not Qualified | |
| RMS On-state Current-Max | 2800 A | |
| Repetitive Peak Off-state Leakage Current-Max | 100000 µA | |
| Repetitive Peak Off-state Voltage | 1200 V | |
| Repetitive Peak Reverse Voltage | 1200 V | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Trigger Device Type | SCR |
Alternate Parts for SKT1200/12E
This table gives cross-reference parts and alternative options found for SKT1200/12E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKT1200/12E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| S52K10A | Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element | International Rectifier | SKT1200/12E vs S52K10A |
| SKT1000/12D | Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AD | SEMIKRON | SKT1200/12E vs SKT1000/12D |
| S52K8B | Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element | International Rectifier | SKT1200/12E vs S52K8B |
| SKT1000/12E | Silicon Controlled Rectifier, 2300A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AD, HERMETIC SEALED, METAL, CASE B 14, 4 PIN | SEMIKRON | SKT1200/12E vs SKT1000/12E |
| C451PA | Silicon Controlled Rectifier, 2355A I(T)RMS, 1100V V(DRM), 1100V V(RRM), 1 Element, T9G, 3 PIN | Powerex Power Semiconductors | SKT1200/12E vs C451PA |
| S52K12A | Silicon Controlled Rectifier, 2510A I(T)RMS, 1600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element | International Rectifier | SKT1200/12E vs S52K12A |
| T9G0121003DH | Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T9G, 3 PIN | Powerex Power Semiconductors | SKT1200/12E vs T9G0121003DH |
| T9G0081203DH | Silicon Controlled Rectifier, 1884A I(T)RMS, 1200000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, T9G, 3 PIN | Powerex Power Semiconductors | SKT1200/12E vs T9G0081203DH |
| N510CH08 | Silicon Controlled Rectifier, 2433.5A I(T)RMS, 1550000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element | IXYS Corporation | SKT1200/12E vs N510CH08 |
| ST1200C08K0PBF | Silicon Controlled Rectifier, 3080A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element | International Rectifier | SKT1200/12E vs ST1200C08K0PBF |