Datasheets
SNXH80T120L2Q0P2G by: onsemi

Insulated Gate Bipolar Transistor

Part Details for SNXH80T120L2Q0P2G by onsemi

Overview of SNXH80T120L2Q0P2G by onsemi

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Price & Stock for SNXH80T120L2Q0P2G

Part # Distributor Description Stock Price Buy
DISTI # SNXH80T120L2Q0P2G
Avnet Americas IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray 2616 Partner Stock
  • 12 $62.5300
  • 20 $60.8400
  • 30 $59.1500
  • 60 $57.4600
  • 120 $55.7700
  • 600 $54.0800
  • 1,200 $52.3900
$52.3900 / $62.5300 Buy Now
DISTI # SNXH80T120L2Q0P2G
Avnet Americas IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray 2616 Partner Stock
  • 12 $62.5300
  • 20 $60.8400
  • 30 $59.1500
  • 60 $57.4600
  • 120 $55.7700
  • 600 $54.0800
  • 1,200 $52.3900
$52.3900 / $62.5300 Buy Now
DISTI # SNXH80T120L2Q0P2G
Avnet Americas IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray 2616 Partner Stock
  • 12 $62.5300
  • 20 $60.8400
  • 30 $59.1500
  • 60 $57.4600
  • 120 $55.7700
  • 600 $54.0800
  • 1,200 $52.3900
$52.3900 / $62.5300 Buy Now
Flip Electronics Stock, ship today 2616
  • 1 $42.2500
$42.2500 RFQ

Part Details for SNXH80T120L2Q0P2G

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SNXH80T120L2Q0P2G Part Data Attributes

SNXH80T120L2Q0P2G onsemi
Buy Now Datasheet
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SNXH80T120L2Q0P2G onsemi Insulated Gate Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description MODULE-20
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 67 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X20
Number of Elements 4
Number of Terminals 20
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 158 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 293 ns
Turn-on Time-Nom (ton) 88 ns
VCEsat-Max 2.85 V

Alternate Parts for SNXH80T120L2Q0P2G

This table gives cross-reference parts and alternative options found for SNXH80T120L2Q0P2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SNXH80T120L2Q0P2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NXH80T120L2Q0PG Power Integrated Module, IGBT, T-Type, 1200 V, 80 A, 24-BTRAY onsemi SNXH80T120L2Q0P2G vs NXH80T120L2Q0PG
NXH80T120L2Q0S1GQ0PACK Insulated Gate Bipolar Transistor onsemi SNXH80T120L2Q0P2G vs NXH80T120L2Q0S1GQ0PACK

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