Part Details for SNXH80T120L2Q0P2G by onsemi
Overview of SNXH80T120L2Q0P2G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SNXH80T120L2Q0P2G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SNXH80T120L2Q0P2G
|
Avnet Americas | IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray | 2616 Partner Stock |
|
$52.3900 / $62.5300 | Buy Now |
DISTI #
SNXH80T120L2Q0P2G
|
Avnet Americas | IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray | 2616 Partner Stock |
|
$52.3900 / $62.5300 | Buy Now |
DISTI #
SNXH80T120L2Q0P2G
|
Avnet Americas | IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1200 V 67 A 158 W CHASSIS MOUNT 20-PIM/Q0PACK (55X32.5) - Trays (Alt: SNXH80T120L2Q0P2G) RoHS: Compliant Min Qty: 12 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray | 2616 Partner Stock |
|
$52.3900 / $62.5300 | Buy Now |
|
Flip Electronics | Stock, ship today | 2616 |
|
$42.2500 | RFQ |
Part Details for SNXH80T120L2Q0P2G
SNXH80T120L2Q0P2G CAD Models
SNXH80T120L2Q0P2G Part Data Attributes
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SNXH80T120L2Q0P2G
onsemi
Buy Now
Datasheet
|
Compare Parts:
SNXH80T120L2Q0P2G
onsemi
Insulated Gate Bipolar Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | MODULE-20 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 67 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X20 | |
Number of Elements | 4 | |
Number of Terminals | 20 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 158 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 293 ns | |
Turn-on Time-Nom (ton) | 88 ns | |
VCEsat-Max | 2.85 V |
Alternate Parts for SNXH80T120L2Q0P2G
This table gives cross-reference parts and alternative options found for SNXH80T120L2Q0P2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SNXH80T120L2Q0P2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NXH80T120L2Q0PG | Power Integrated Module, IGBT, T-Type, 1200 V, 80 A, 24-BTRAY | onsemi | SNXH80T120L2Q0P2G vs NXH80T120L2Q0PG |
NXH80T120L2Q0S1GQ0PACK | Insulated Gate Bipolar Transistor | onsemi | SNXH80T120L2Q0P2G vs NXH80T120L2Q0S1GQ0PACK |