Part Details for SPA20N60C3XK by Infineon Technologies AG
Overview of SPA20N60C3XK by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPA20N60C3XK
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPA20N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5278 / $3.0695 | Buy Now |
DISTI #
SPA20N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.5278 / $3.0695 | Buy Now |
DISTI #
SPA20N60C3XKSA1
|
Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.5278 / $3.0695 | Buy Now |
Part Details for SPA20N60C3XK
SPA20N60C3XK CAD Models
SPA20N60C3XK Part Data Attributes
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SPA20N60C3XK
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA20N60C3XK
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-220FP, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 62.1 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPA20N60C3XK
This table gives cross-reference parts and alternative options found for SPA20N60C3XK. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N60C3XK, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STF23NM60N | 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN | STMicroelectronics | SPA20N60C3XK vs STF23NM60N |
SIHF22N60E-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | SPA20N60C3XK vs SIHF22N60E-GE3 |
SIHA22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | SPA20N60C3XK vs SIHA22N60E-E3 |
SIHP14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPA20N60C3XK vs SIHP14N60E-GE3 |
SPA20N65C3XK | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | SPA20N60C3XK vs SPA20N65C3XK |
TK17A65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SPA20N60C3XK vs TK17A65W5 |
STF21NM60ND | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package | STMicroelectronics | SPA20N60C3XK vs STF21NM60ND |
STF23NM60ND | N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP | STMicroelectronics | SPA20N60C3XK vs STF23NM60ND |
SPW15N60CFD | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPA20N60C3XK vs SPW15N60CFD |
SSF20NS60F | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPA20N60C3XK vs SSF20NS60F |