Part Details for SPA20N60C3XKSA1 by Infineon Technologies AG
Overview of SPA20N60C3XKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for SPA20N60C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
16M4990
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Newark | Mosfet, N Channel, 650V, 20.7A, To-220Fp, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:20.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPA20N60C3XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 629 |
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$3.4300 / $5.6800 | Buy Now |
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DISTI #
SPA20N60C3XKSA1-ND
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DigiKey | MOSFET N-CH 600V 20.7A TO220-31 Min Qty: 1 Lead time: 15 Weeks Container: Tube | Temporarily Out of Stock |
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$2.6634 / $5.4700 | Buy Now |
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DISTI #
SPA20N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5278 / $3.0695 | Buy Now |
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DISTI #
73928888
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RS | Transistor, MOSFET, N-channel, 650V, 20.7A, 0.19 Ohm, TO-220FP, CoolMOS Power | Infineon SPA20N60C3XKSA1 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 3 |
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$4.1700 / $5.5600 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 950Tube |
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$1.7400 / $1.9000 | Buy Now |
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Future Electronics | Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
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$2.7800 / $3.0300 | Buy Now |
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DISTI #
SPA20N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5278 / $3.0695 | Buy Now |
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Ameya Holding Limited | Min Qty: 50 | 346 |
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$5.0871 / $5.3513 | Buy Now |
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DISTI #
SPA20N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA20N60C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.5278 / $3.0695 | Buy Now |
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NexGen Digital | 8 |
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RFQ |
Part Details for SPA20N60C3XKSA1
SPA20N60C3XKSA1 CAD Models
SPA20N60C3XKSA1 Part Data Attributes
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SPA20N60C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA20N60C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62.1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPA20N60C3XKSA1
This table gives cross-reference parts and alternative options found for SPA20N60C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N60C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STF23NM60N | 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN | STMicroelectronics | SPA20N60C3XKSA1 vs STF23NM60N |
| SIHF22N60E-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | SPA20N60C3XKSA1 vs SIHF22N60E-GE3 |
| SIHA22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | SPA20N60C3XKSA1 vs SIHA22N60E-E3 |
| SIHP14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPA20N60C3XKSA1 vs SIHP14N60E-GE3 |
| SPA20N65C3XK | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | SPA20N60C3XKSA1 vs SPA20N65C3XK |
| TK17A65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SPA20N60C3XKSA1 vs TK17A65W5 |
| STF21NM60ND | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package | STMicroelectronics | SPA20N60C3XKSA1 vs STF21NM60ND |
| STF23NM60ND | N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP | STMicroelectronics | SPA20N60C3XKSA1 vs STF23NM60ND |
| SPW15N60CFD | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPA20N60C3XKSA1 vs SPW15N60CFD |
| SSF20NS60F | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPA20N60C3XKSA1 vs SSF20NS60F |