Part Details for SPB03N60C3ATMA1 by Infineon Technologies AG
Overview of SPB03N60C3ATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Motor control systems
Price & Stock for SPB03N60C3ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPB03N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 12314 |
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$0.4091 / $0.4813 | Buy Now |
Part Details for SPB03N60C3ATMA1
SPB03N60C3ATMA1 CAD Models
SPB03N60C3ATMA1 Part Data Attributes:
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SPB03N60C3ATMA1
Infineon Technologies AG
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Datasheet
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SPB03N60C3ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 9.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |