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Transistors / Power Field-Effect Transistors / SPB20N60C3
Datasheets
SPB20N60C3 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for SPB20N60C3 by Infineon Technologies AG

Overview of SPB20N60C3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SPB20N60C3

Part # Distributor Description Stock Price Buy
DISTI # 726-SPB20N60C3
Mouser Electronics MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 RoHS: Compliant 4338
  • 1 $5.4300
  • 10 $4.5700
  • 25 $4.4000
  • 100 $3.7100
  • 250 $3.2500
  • 500 $3.0700
  • 1,000 $2.7400
  • 2,000 $2.6600
$2.6600 / $5.4300 Buy Now
DISTI # SPB20N60C3
TME Transistor: N-MOSFET, unipolar, 650V, 20.7A, 208W, PG-TO263-3 Min Qty: 1 304
  • 1 $3.5400
  • 5 $3.1200
  • 25 $2.8100
  • 100 $2.6200
  • 250 $2.5200
  • 1,000 $2.4400
$2.4400 / $3.5400 Buy Now
ComSIT USA COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Europe - 1135
RFQ
Sense Electronic Company Limited TO-263 1000
RFQ

Part Details for SPB20N60C3

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SPB20N60C3 Part Data Attributes

Parametric Data
SPB20N60C3 Infineon Technologies AG
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SPB20N60C3 Infineon Technologies AG Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.7 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 62.1 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPB20N60C3

This table gives cross-reference parts and alternative options found for SPB20N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB20N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics SPB20N60C3 vs STH8NA60FI
SPP47N10 Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPB20N60C3 vs SPP47N10
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc SPB20N60C3 vs IXFH7N90Q
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc SPB20N60C3 vs IXFH14N80
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG SPB20N60C3 vs IPD90N06S306ATMA1
STP4NK60Z N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package STMicroelectronics SPB20N60C3 vs STP4NK60Z
SSP10N60B Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SPB20N60C3 vs SSP10N60B
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics SPB20N60C3 vs STP19N06
FQPF7N20 Power Field-Effect Transistor, 4.8A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation SPB20N60C3 vs FQPF7N20
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics SPB20N60C3 vs STW80NF55-06

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