There are no models available for this part yet.
Overview of SPB20N60S5 by Rochester Electronics LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for SPB20N60S5 by Rochester Electronics LLC
Part Data Attributes for SPB20N60S5 by Rochester Electronics LLC
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code
|
D2PAK
|
Package Description
|
GREEN, PLASTIC, TO-263, 3 PIN
|
Pin Count
|
4
|
Reach Compliance Code
|
unknown
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
690 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
20 A
|
Drain-source On Resistance-Max
|
0.19 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
NOT SPECIFIED
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
COMMERCIAL
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SPB20N60S5
This table gives cross-reference parts and alternative options found for SPB20N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB20N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SSP7N60A | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SPB20N60S5 vs SSP7N60A |
FQPF34N20 | 17.5A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FQPF34N20 |
IRF654B | 21A, 250V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs IRF654B |
FQPF3N40 | 1.6A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FQPF3N40 |
FQA24N50 | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FQA24N50 |
SSH7N90A | Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | SPB20N60S5 vs SSH7N90A |
FQA24N50F | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FQA24N50F |
SSS5N90A | Power Field-Effect Transistor, 3A I(D), 900V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | SPB20N60S5 vs SSS5N90A |
FDP6035L | 58A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FDP6035L |
FQAF8N80 | 5.9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | Rochester Electronics LLC | SPB20N60S5 vs FQAF8N80 |
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