Part Details for SPD04N60S5BTMA1 by Infineon Technologies AG
Overview of SPD04N60S5BTMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPD04N60S5BTMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPD04N60 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4900 |
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$0.5826 / $0.6854 | Buy Now |
DISTI #
SP000313946
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EBV Elektronik | Trans MOSFET N-CH 600V 4.5A 3-Pin TO-252 T/R (Alt: SP000313946) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Buy Now |
Part Details for SPD04N60S5BTMA1
SPD04N60S5BTMA1 CAD Models
SPD04N60S5BTMA1 Part Data Attributes
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SPD04N60S5BTMA1
Infineon Technologies AG
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Datasheet
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SPD04N60S5BTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 9 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPD04N60S5BTMA1
This table gives cross-reference parts and alternative options found for SPD04N60S5BTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD04N60S5BTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STD7N60M2 | N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package | STMicroelectronics | SPD04N60S5BTMA1 vs STD7N60M2 |
SPP04N60S5HKSA1 | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPD04N60S5BTMA1 vs SPP04N60S5HKSA1 |
STU7N60M2 | N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package | STMicroelectronics | SPD04N60S5BTMA1 vs STU7N60M2 |
FCD900N65S3Z | Power Field-Effect Transistor | onsemi | SPD04N60S5BTMA1 vs FCD900N65S3Z |
TK5P60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SPD04N60S5BTMA1 vs TK5P60W |
TK5P60W5,RVQ | Power Field-Effect Transistor | Toshiba America Electronic Components | SPD04N60S5BTMA1 vs TK5P60W5,RVQ |