Datasheets
SPD08P05 by:

Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SPD08P05 by Siemens

Overview of SPD08P05 by Siemens

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Price & Stock for SPD08P05

Part # Distributor Description Stock Price Buy
Quest Components 8 A, 50 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET 1360
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Part Details for SPD08P05

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SPD08P05 Part Data Attributes

SPD08P05 Siemens
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SPD08P05 Siemens Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SPD08P05

This table gives cross-reference parts and alternative options found for SPD08P05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08P05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD8P05SM9A Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SPD08P05 vs RFD8P05SM9A
SFR9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SPD08P05 vs SFR9024
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation SPD08P05 vs RFD8P06ESM9A
SUD08P06-155L-E3 Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SPD08P05 vs SUD08P06-155L-E3
SFR9024TM 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC SPD08P05 vs SFR9024TM
SPB18P06P 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SPD08P05 vs SPB18P06P
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SPD08P05 vs RFD8P06ESM
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 Fairchild Semiconductor Corporation SPD08P05 vs SFW9Z24
SFR9014 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SPD08P05 vs SFR9014
SFW9Z34 Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SPD08P05 vs SFW9Z34

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