Datasheets
SPD18P06PGBTMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN

Part Details for SPD18P06PGBTMA1 by Infineon Technologies AG

Overview of SPD18P06PGBTMA1 by Infineon Technologies AG

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Price & Stock for SPD18P06PGBTMA1

Part # Distributor Description Stock Price Buy
DISTI # 2212859
Farnell MOSFET, P-CH, 60V, 18.6A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 10154
  • 1 $1.3027
  • 10 $0.9486
  • 100 $0.6931
  • 500 $0.5565
  • 1,000 $0.5514
  • 5,000 $0.5451
$0.5451 / $1.3027 Buy Now
DISTI # SPD18P06PGBTMA1
Avnet Americas Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.4066
  • 5,000 $0.4034
  • 10,000 $0.4001
  • 15,000 $0.3969
  • 20,000 $0.3937
$0.3937 / $0.4066 Buy Now
Rochester Electronics SPD18P06P G - P-channel enhancement mode Field-Effect Transistor RoHS: Compliant Status: Active Min Qty: 1 2473
  • 1 $0.5400
  • 25 $0.5292
  • 100 $0.5076
  • 500 $0.4860
  • 1,000 $0.4590
$0.4590 / $0.5400 Buy Now
DISTI # SPD18P06PGBTMA1
TME Transistor: P-MOSFET, unipolar, -60V, -18.6A, 80W, PG-TO252-3 Min Qty: 1 2436
  • 1 $1.0900
  • 10 $1.0000
  • 25 $0.8900
  • 100 $0.8100
  • 250 $0.7900
  • 500 $0.7400
  • 1,000 $0.7200
  • 2,500 $0.6900
$0.6900 / $1.0900 Buy Now
DISTI # C1S322000090039
Chip1Stop Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape 9619
  • 1 $0.6780
  • 10 $0.4760
  • 50 $0.4740
  • 100 $0.4730
  • 200 $0.4720
  • 500 $0.4710
  • 1,000 $0.4700
$0.4700 / $0.6780 Buy Now
DISTI # SP000443926
EBV Elektronik Power MOSFET, P Channel, 60 V, 18.6 A, 0.1 ohm, TO-252 (DPAK), Surface Mount (Alt: SP000443926) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days EBV - 107500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 90000
  • 2,500 $0.7468
  • 90,000 $0.6910
$0.6910 / $0.7468 Buy Now
Win Source Electronics MOSFET P-CH 60V 18.6A TO252-3 96984
  • 75 $0.7070
  • 175 $0.5802
  • 270 $0.5620
  • 370 $0.5439
  • 480 $0.5258
  • 640 $0.4714
$0.4714 / $0.7070 Buy Now

Part Details for SPD18P06PGBTMA1

SPD18P06PGBTMA1 CAD Models

SPD18P06PGBTMA1 Part Data Attributes

SPD18P06PGBTMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPD18P06PGBTMA1 Infineon Technologies AG Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252AB
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18.6 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 74.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SPD18P06PGBTMA1

This table gives cross-reference parts and alternative options found for SPD18P06PGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD18P06PGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SPP18P06PHXKSA1 Infineon Technologies AG $0.9962 Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPD18P06PGBTMA1 vs SPP18P06PHXKSA1
SPD18P06PGBT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN SPD18P06PGBTMA1 vs SPD18P06PGBT
SPP18P06PG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPD18P06PGBTMA1 vs SPP18P06PG
SFI9Z34TU Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 SPD18P06PGBTMA1 vs SFI9Z34TU

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