-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2212859
|
Farnell | MOSFET, P-CH, 60V, 18.6A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each | 10154 |
|
$0.5451 / $1.3027 | Buy Now |
DISTI #
SPD18P06PGBTMA1
|
Avnet Americas | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 2500 |
|
$0.3937 / $0.4066 | Buy Now |
|
Rochester Electronics | SPD18P06P G - P-channel enhancement mode Field-Effect Transistor RoHS: Compliant Status: Active Min Qty: 1 | 2473 |
|
$0.4590 / $0.5400 | Buy Now |
DISTI #
SPD18P06PGBTMA1
|
TME | Transistor: P-MOSFET, unipolar, -60V, -18.6A, 80W, PG-TO252-3 Min Qty: 1 | 2436 |
|
$0.6900 / $1.0900 | Buy Now |
DISTI #
C1S322000090039
|
Chip1Stop | Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape | 9619 |
|
$0.4700 / $0.6780 | Buy Now |
DISTI #
SP000443926
|
EBV Elektronik | Power MOSFET, P Channel, 60 V, 18.6 A, 0.1 ohm, TO-252 (DPAK), Surface Mount (Alt: SP000443926) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days | EBV - 107500 |
|
Buy Now | |
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 90000 |
|
$0.6910 / $0.7468 | Buy Now |
|
Win Source Electronics | MOSFET P-CH 60V 18.6A TO252-3 | 96984 |
|
$0.4714 / $0.7070 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SPD18P06PGBTMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPD18P06PGBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AB | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18.6 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 74.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPD18P06PGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD18P06PGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SPP18P06PHXKSA1 | Infineon Technologies AG | $0.9962 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPD18P06PGBTMA1 vs SPP18P06PHXKSA1 |
SPD18P06PGBT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | SPD18P06PGBTMA1 vs SPD18P06PGBT |
SPP18P06PG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPD18P06PGBTMA1 vs SPP18P06PG |
SFI9Z34TU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | SPD18P06PGBTMA1 vs SFI9Z34TU |