Part Details for SPI21N50C3XKSA1 by Infineon Technologies AG
Overview of SPI21N50C3XKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPI21N50C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-SPI21N50C3XKSA1-ND
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DigiKey | MOSFET N-CH 560V 21A TO262-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
450 In Stock |
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$2.0953 / $4.3000 | Buy Now |
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DISTI #
SPI21N50C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: SPI21N50C3XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 32497 |
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$1.7780 / $2.1590 | Buy Now |
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DISTI #
726-SPI21N50C3XKSA1
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Mouser Electronics | MOSFET N-Ch 560V 21A I2PAK-3 RoHS: Compliant | 0 |
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$2.0900 / $4.3000 | Order Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$1.7500 / $1.9200 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$1.7500 / $1.9200 | Buy Now |
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DISTI #
SPI21N50C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: SPI21N50C3XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 32497 |
|
$1.7780 / $2.1590 | Buy Now |
|
DISTI #
SPI21N50C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: SPI21N50C3XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 32497 |
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$1.7780 / $2.1590 | Buy Now |
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DISTI #
SP000681012
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EBV Elektronik | Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-262 (Alt: SP000681012) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 2 Weeks, 2 Days | EBV - 0 |
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Buy Now |
Part Details for SPI21N50C3XKSA1
SPI21N50C3XKSA1 CAD Models
SPI21N50C3XKSA1 Part Data Attributes
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SPI21N50C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPI21N50C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-262, I2PAK-3 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPI21N50C3XKSA1
This table gives cross-reference parts and alternative options found for SPI21N50C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPI21N50C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| Q67040-S4566 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs Q67040-S4566 |
| SPP21N50C3XKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPP21N50C3XKSA1 |
| SPP21N50C3HKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPP21N50C3HKSA1 |
| SPI21N50C3HKSA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPI21N50C3HKSA1 |
| APT5019HLL | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN | Advanced Power Technology | SPI21N50C3XKSA1 vs APT5019HLL |
| SPB21N50C3ATMA1 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPB21N50C3ATMA1 |
| SPW21N50C3 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPW21N50C3 |
| SIHP20N50E-GE3 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPI21N50C3XKSA1 vs SIHP20N50E-GE3 |
| SPB21N50C3 | Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPI21N50C3XKSA1 vs SPB21N50C3 |