Datasheets
SPP20N60C3 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SPP20N60C3 by Infineon Technologies AG

Results Overview of SPP20N60C3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

SPP20N60C3 Information

SPP20N60C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SPP20N60C3

Part # Distributor Description Stock Price Buy
DISTI # SPP20N60C3
TME Transistor: N-MOSFET, unipolar, 600V, 20.7A, 208W, PG-TO220-3 Min Qty: 1 87
  • 1 $2.9100
  • 3 $2.5800
  • 10 $2.3100
  • 50 $2.1500
  • 100 $2.0000
$2.0000 / $2.9100 Buy Now
ComSIT USA AVAILABLE EU 15
RFQ
ComSIT USA AVAILABLE EU 103
RFQ
ComSIT USA COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant ECCN: EAR99 Stock DE - 14815
Stock ES - 1451
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
LCSC 600V 20.7A 208W 0.1910V13.1A 3V TO-220 MOSFETs ROHS 2524
  • 1 $2.4729
  • 10 $2.1109
  • 30 $1.8859
  • 100 $1.4684
  • 500 $1.3636
  • 1,000 $1.3189
$1.3189 / $2.4729 Buy Now
Vyrian Transistors 730
RFQ
Win Source Electronics MOSFET N-CH 600V 20.7A TO-220 15026
  • 30 $1.7852
  • 70 $1.4648
  • 110 $1.4191
  • 150 $1.3733
  • 190 $1.3275
  • 255 $1.1902
$1.1902 / $1.7852 Buy Now

Part Details for SPP20N60C3

SPP20N60C3 CAD Models

SPP20N60C3 Part Data Attributes

SPP20N60C3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPP20N60C3 Infineon Technologies AG Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.7 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 62.1 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPP20N60C3

This table gives cross-reference parts and alternative options found for SPP20N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SPP20N60C3XK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPP20N60C3 vs SPP20N60C3XK
Q67040-S4398 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPP20N60C3 vs Q67040-S4398
Part Number Manufacturer Composite Price Description Compare
SPP20N65C3XK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPP20N60C3 vs SPP20N65C3XK
SPB20N60S5E3045A Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN SPP20N60C3 vs SPB20N60S5E3045A
SIHP22N60EL-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SPP20N60C3 vs SIHP22N60EL-GE3
SPP20N65C3XKSA1 Infineon Technologies AG $3.7191 Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPP20N60C3 vs SPP20N65C3XKSA1
IPI60R190C6XKSA1 Infineon Technologies AG $1.7039 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN SPP20N60C3 vs IPI60R190C6XKSA1
SIHB22N65E-GE3 Vishay Intertechnologies $2.9361 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 SPP20N60C3 vs SIHB22N65E-GE3
STI23NM60ND STMicroelectronics Check for Price 19.5A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN SPP20N60C3 vs STI23NM60ND
SIHP21N60EF-GE3 Vishay Intertechnologies $2.7160 Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SPP20N60C3 vs SIHP21N60EF-GE3
SIHB22N60AE-GE3 Vishay Intertechnologies $2.7804 Power Field-Effect Transistor, SPP20N60C3 vs SIHB22N60AE-GE3
SIHP22N65E-GE3 Vishay Intertechnologies $2.8131 Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SPP20N60C3 vs SIHP22N65E-GE3

SPP20N60C3 Related Parts

SPP20N60C3 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the SPP20N60C3 is not explicitly stated in the datasheet. However, Infineon provides a SOA curve in the application note AN2013-01, which can be used to determine the maximum safe operating area for this device.

  • To ensure the SPP20N60C3 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended to limit the gate current and prevent oscillations.

  • The maximum allowed drain-source voltage (Vds) for the SPP20N60C3 is 600V, as specified in the datasheet. However, it's essential to consider the maximum voltage rating, derating, and voltage spikes when designing the application.

  • To handle thermal management for the SPP20N60C3, ensure good heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and consider using a heat sink with a thermal resistance of less than 10°C/W. Monitor the junction temperature (Tj) and ensure it stays below the maximum rated temperature of 175°C.

  • For the SPP20N60C3, a good PCB layout practice is to use a compact layout, minimize trace lengths, and use a ground plane to reduce electromagnetic interference (EMI). Keep the gate trace short and away from the drain trace to prevent oscillations. Use a Kelvin connection for the source pin to reduce parasitic inductance.

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