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Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPP20N60C3
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TME | Transistor: N-MOSFET, unipolar, 600V, 20.7A, 208W, PG-TO220-3 Min Qty: 1 | 69 |
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$2.3700 / $3.4500 | Buy Now |
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ComSIT USA | COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 14665 |
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RFQ | |
DISTI #
TMOSP10673
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Rutronik | CoolMOS 600V 21A 190mOhm TO220 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 2400 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$2.0400 / $2.6400 | Buy Now |
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Velocity Electronics | Our Stock | 4500 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 11159 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 9750 |
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RFQ | |
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CHIPMALL.COM LIMITED | POWER FIELD-EFFECT TRANSISTOR, 2 | 137 |
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$1.3956 | Buy Now |
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CHIPMALL.COM LIMITED | POWER FIELD-EFFECT TRANSISTOR, 2 | 104 |
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$1.6068 | Buy Now |
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Chips Pulse Industry Limited | TO-220-3 MOSFETs ROHS Purchase Online, Ship Immediately | 2326 |
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$1.2046 / $1.6249 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 51 |
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$3.5000 / $5.3800 | Buy Now |
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SPP20N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP20N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 62.1 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPP20N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPP20N60C3HKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP20N60C3 vs SPP20N60C3HKSA1 |