Part Details for SPP20N60C3HKSA1 by Infineon Technologies AG
Overview of SPP20N60C3HKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for SPP20N60C3HKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPP20N60C3HKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP20N60C3HKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Tube | 0 |
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RFQ | |
DISTI #
SPP20N60C3HKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP20N60C3HKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Tube | 0 |
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RFQ | |
DISTI #
SPP20N60C3HKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP20N60C3HKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Tube | 0 |
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RFQ | |
DISTI #
SP000013527
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EBV Elektronik | Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 (Alt: SP000013527) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 1 Days | EBV - 0 |
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Buy Now | |
DISTI #
1056551
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element14 Asia-Pacific | MOSFET, N, COOLMOS, 650V, 20.7V, TO-220 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$2.5026 / $4.5868 | Buy Now |
DISTI #
1056551
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Farnell | MOSFET, N, COOLMOS, 650V, 20.7V, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each | 0 |
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$2.1105 / $3.7912 | Buy Now |
Part Details for SPP20N60C3HKSA1
SPP20N60C3HKSA1 CAD Models
SPP20N60C3HKSA1 Part Data Attributes
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SPP20N60C3HKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP20N60C3HKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 62.1 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPP20N60C3HKSA1
This table gives cross-reference parts and alternative options found for SPP20N60C3HKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60C3HKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP20N60C3HKSA1 vs IPP60R190C6XKSA1 |
SIHP21N65EF-GE3 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPP20N60C3HKSA1 vs SIHP21N65EF-GE3 |
SPB20N60C3ATMA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP20N60C3HKSA1 vs SPB20N60C3ATMA1 |
SIHG22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPP20N60C3HKSA1 vs SIHG22N60EL-GE3 |
SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPP20N60C3HKSA1 vs SSF20NS60 |
STI20NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SPP20N60C3HKSA1 vs STI20NM65N |
SPI20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPP20N60C3HKSA1 vs SPI20N60C3XKSA1 |
SIHP22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPP20N60C3HKSA1 vs SIHP22N60E-E3 |
R6520KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | SPP20N60C3HKSA1 vs R6520KNZ4C13 |
SIHB22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SPP20N60C3HKSA1 vs SIHB22N65E-GE3 |