Datasheets
SPP80N06S2L-11 by:

Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for SPP80N06S2L-11 by Infineon Technologies AG

Overview of SPP80N06S2L-11 by Infineon Technologies AG

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Price & Stock for SPP80N06S2L-11

Part # Distributor Description Stock Price Buy
Rochester Electronics SPP80N06 - OPTIMOS, 80A, 55V, 0.0147ohm, N-Channel, Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 132
  • 1 $0.6125
  • 25 $0.6003
  • 100 $0.5758
  • 500 $0.5513
  • 1,000 $0.5206
$0.5206 / $0.6125 Buy Now
Chip1Cloud MOSFET N-CH 55V 80A TO-220 3030
RFQ

Part Details for SPP80N06S2L-11

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SPP80N06S2L-11 Part Data Attributes:

SPP80N06S2L-11 Infineon Technologies AG
Buy Now Datasheet
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SPP80N06S2L-11 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0147 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPP80N06S2L-11

This table gives cross-reference parts and alternative options found for SPP80N06S2L-11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP80N06S2L-11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP80N06S2L11AKSA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP80N06S2L-11 vs IPP80N06S2L11AKSA1
SPP80N06S2L-11 80A, 55V, 0.0147ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN Rochester Electronics LLC SPP80N06S2L-11 vs SPP80N06S2L-11
Part Number Description Manufacturer Compare
RFP5P12 Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SPP80N06S2L-11 vs RFP5P12
2SK3298-AZ Switching N-Channel Power Mosfet, MP-45F, /Bag Renesas Electronics Corporation SPP80N06S2L-11 vs 2SK3298-AZ
2SJ117 2A, 400V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation SPP80N06S2L-11 vs 2SJ117
STW18NM80 N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package STMicroelectronics SPP80N06S2L-11 vs STW18NM80
2SK3298 Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group SPP80N06S2L-11 vs 2SK3298
TK20J60W TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components SPP80N06S2L-11 vs TK20J60W
SPA07N60C3 Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN Infineon Technologies AG SPP80N06S2L-11 vs SPA07N60C3
SPI80N06S2L-11 Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN Infineon Technologies AG SPP80N06S2L-11 vs SPI80N06S2L-11
SPP15P10PG Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP80N06S2L-11 vs SPP15P10PG
PSMN035-150P Power Field-Effect Transistor Nexperia SPP80N06S2L-11 vs PSMN035-150P

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