Part Details for SPW16N50C3FKSA1 by Infineon Technologies AG
Overview of SPW16N50C3FKSA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPW16N50C3FKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33P8231
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Newark | Mosfet, N Channel, 560V, 16A, To-247-3, Channel Type:N Channel, Drain Source Voltage Vds:560V, Continuous Drain Current Id:16A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPW16N50C3FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 11 |
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$2.0800 / $3.6500 | Buy Now |
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DISTI #
SPW16N50C3FKSA1-ND
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DigiKey | MOSFET N-CH 560V 16A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
186 In Stock |
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$1.8091 / $3.8700 | Buy Now |
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DISTI #
SPW16N50C3FKSA1
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Avnet Americas | Trans MOSFET N-CH 560V 16A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW16N50C3FKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.9249 / $2.3373 | Buy Now |
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DISTI #
E02:0323_00170751
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Arrow Electronics | Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2401 | Europe - 180 |
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$1.7655 / $3.2396 | Buy Now |
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DISTI #
V36:1790_06377668
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Arrow Electronics | Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2229 | Americas - 35 |
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$1.2242 / $1.6359 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube | 0Tube |
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$1.9400 | Buy Now |
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DISTI #
76842275
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Verical | Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-247 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2401 | Americas - 180 |
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$1.7561 / $3.2223 | Buy Now |
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DISTI #
63330819
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Verical | Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-247 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2229 | Americas - 35 |
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$1.2242 / $1.6359 | Buy Now |
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Rochester Electronics | SPW16N50 - 500V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 455 |
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$1.7900 / $2.1100 | Buy Now |
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DISTI #
SPW16N50C3FKSA1
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Avnet Americas | Trans MOSFET N-CH 560V 16A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW16N50C3FKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.9249 / $2.3373 | Buy Now |
Part Details for SPW16N50C3FKSA1
SPW16N50C3FKSA1 CAD Models
SPW16N50C3FKSA1 Part Data Attributes:
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SPW16N50C3FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW16N50C3FKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPW16N50C3FKSA1
This table gives cross-reference parts and alternative options found for SPW16N50C3FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW16N50C3FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | SPW16N50C3FKSA1 vs NDB706AL |
| IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SPW16N50C3FKSA1 vs IRFS620 |
| FQA30N40 | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | SPW16N50C3FKSA1 vs FQA30N40 |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | SPW16N50C3FKSA1 vs IPD90N06S306ATMA1 |
| STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | SPW16N50C3FKSA1 vs STP4NK60Z |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPW16N50C3FKSA1 vs SPB80N06S2-07 |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | SPW16N50C3FKSA1 vs IXFH30N40Q |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | SPW16N50C3FKSA1 vs SSH60N08 |
| NDP605BE | TRANSISTOR 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | National Semiconductor Corporation | SPW16N50C3FKSA1 vs NDP605BE |
| STW29NK50Z | 31A, 500V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | SPW16N50C3FKSA1 vs STW29NK50Z |