-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
726-SPW20N60C3
|
Mouser Electronics | MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3 RoHS: Compliant | 0 |
|
$3.1300 / $6.4400 | Order Now |
|
Bristol Electronics | 32 |
|
RFQ | ||
|
Bristol Electronics | 868 |
|
RFQ | ||
|
Quest Components | MOSFET Transistor, N-Channel, TO-247VAR | 25 |
|
$4.6950 / $7.0425 | Buy Now |
|
Quest Components | MOSFET Transistor, N-Channel, TO-247VAR | 20 |
|
$4.6950 / $7.0425 | Buy Now |
DISTI #
SPW20N60C3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 13.1A, 208W, PG-TO247-3 Min Qty: 1 | 57 |
|
$3.5900 / $5.1300 | Buy Now |
DISTI #
TMOSP6328
|
Rutronik | N-CH 600V 20,7A 160mOhm TO-247 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 420 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$2.6900 / $3.4800 | Buy Now |
|
Chip 1 Exchange | INSTOCK | 16801 |
|
RFQ | |
|
Chips Pulse Industry Limited | N-Channel 650V 20.7A 3.9V @ 1mA 190mohms @ 13.1A 10V 208W TO-247(AC) MOSFETs RoHS Purchase Online, Ship Immediately | 466 |
|
$1.0523 / $1.3048 | Buy Now |
DISTI #
1564142
|
Farnell | MOSFET, N, TO-247 TUBE 30 RoHS: Compliant Min Qty: 1 Lead time: 6 Weeks, 1 Days Container: Tube | 0 |
|
$89.6513 / $110.6811 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SPW20N60C3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SPW20N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247AD | |
Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 62.1 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPW20N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW20N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | SPW20N60C3 vs STH8NA60FI |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPW20N60C3 vs SPP47N10 |
IXFH7N90Q | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | SPW20N60C3 vs IXFH7N90Q |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | SPW20N60C3 vs IXFH14N80 |
IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | SPW20N60C3 vs IPD90N06S306ATMA1 |
STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | SPW20N60C3 vs STP4NK60Z |
SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SPW20N60C3 vs SSP10N60B |
STP19N06 | 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SPW20N60C3 vs STP19N06 |
FQPF7N20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SPW20N60C3 vs FQPF7N20 |
STW80NF55-06 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | SPW20N60C3 vs STW80NF55-06 |