Part Details for SPW20N60C3FKSA1 by Infineon Technologies AG
Overview of SPW20N60C3FKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPW20N60C3FKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98K0739
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Newark | N Channel Mosfet, 650V, 20.7A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:20.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPW20N60C3FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 909 |
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$4.0400 / $6.6800 | Buy Now |
DISTI #
79AH6749
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Newark | High Power_Legacy Rohs Compliant: Yes |Infineon SPW20N60C3FKSA1 Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.9100 | Buy Now |
DISTI #
448-SPW20N60C3FKSA1-ND
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DigiKey | MOSFET N-CH 650V 20.7A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
1807 In Stock |
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$3.1339 / $6.4400 | Buy Now |
DISTI #
SPW20N60C3FKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW20N60C3FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.9795 / $3.6179 | Buy Now |
DISTI #
98K0739
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Bulk (Alt: 98K0739) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 14 Partner Stock |
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$4.3900 / $6.3300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.19 Ohm 114 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$3.2400 / $3.4200 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.19 Ohm 114 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube | 0Tube |
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$3.2400 / $3.4200 | Buy Now |
DISTI #
SPW20N60C3FKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW20N60C3FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.9795 / $3.6179 | Buy Now |
DISTI #
98K0739
|
Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Bulk (Alt: 98K0739) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 14 Partner Stock |
|
$4.3900 / $6.3300 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 219 |
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$8.9933 / $9.5548 | Buy Now |
Part Details for SPW20N60C3FKSA1
SPW20N60C3FKSA1 CAD Models
SPW20N60C3FKSA1 Part Data Attributes
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SPW20N60C3FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW20N60C3FKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247AD | |
Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 690 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 62.1 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for SPW20N60C3FKSA1
This table gives cross-reference parts and alternative options found for SPW20N60C3FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW20N60C3FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPP60R190C6XKSA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPW20N60C3FKSA1 vs IPP60R190C6XKSA1 |
SIHP21N65EF-GE3 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHP21N65EF-GE3 |
SPB20N60C3ATMA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPW20N60C3FKSA1 vs SPB20N60C3ATMA1 |
SIHG22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHG22N60EL-GE3 |
SSF20NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPW20N60C3FKSA1 vs SSF20NS60 |
STI20NM65N | 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SPW20N60C3FKSA1 vs STI20NM65N |
SPI20N60C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SPW20N60C3FKSA1 vs SPI20N60C3XKSA1 |
SIHP22N60E-E3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHP22N60E-E3 |
R6520KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | SPW20N60C3FKSA1 vs R6520KNZ4C13 |
SIHB22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SPW20N60C3FKSA1 vs SIHB22N65E-GE3 |