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Part Details for SPW20N60S5 by Infineon Technologies AG
Overview of SPW20N60S5 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for SPW20N60S5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73928885
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RS | Transistor, MOSFET, n-channel, 600V, 0.19 Ohm, 20A, TO247, CoolMOS Power | Infineon SPW20N60S5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 4 |
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$4.9500 / $6.5900 | Buy Now |
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Bristol Electronics | 719 |
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RFQ | ||
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DISTI #
SPW20N60S5
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TME | Transistor: N-MOSFET, unipolar, 600V, 13A, 208W, PG-TO247-3 Min Qty: 1 | 26 |
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$4.8300 / $6.7700 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 4 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 1136 |
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$10.0000 / $15.3800 | Buy Now |
Part Details for SPW20N60S5
SPW20N60S5 CAD Models
SPW20N60S5 Part Data Attributes
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SPW20N60S5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW20N60S5
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |