Datasheets
SPW35N60CFD by: Infineon Technologies AG

Power Field-Effect Transistor, 34.1A I(D), 600V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN

Part Details for SPW35N60CFD by Infineon Technologies AG

Results Overview of SPW35N60CFD by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

SPW35N60CFD Information

SPW35N60CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SPW35N60CFD

Part # Distributor Description Stock Price Buy
DISTI # SPW35N60CFD
TME Transistor: N-MOSFET, unipolar, 600V, 21.6A, 313W, PG-TO247-3 Min Qty: 1 0
  • 1 $12.2600
  • 5 $10.9900
  • 25 $9.7100
  • 90 $8.7200
$8.7200 / $12.2600 RFQ
LCSC 600V 34.1A 0.11810V21.6A 313W 3V1.9mA TO-247AC-3 MOSFETs ROHS 8
  • 1 $13.4998
$13.4998 Buy Now
Win Source Electronics Trans MOSFET N-CH 600V 34.1A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 34.1A TO-247 6059
  • 6 $9.4594
  • 13 $7.7616
  • 20 $7.5191
  • 28 $7.2765
  • 36 $7.0340
  • 48 $6.3063
$6.3063 / $9.4594 Buy Now

Part Details for SPW35N60CFD

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SPW35N60CFD Part Data Attributes

SPW35N60CFD Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPW35N60CFD Infineon Technologies AG Power Field-Effect Transistor, 34.1A I(D), 600V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247AA
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 1300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 34.1 A
Drain-source On Resistance-Max 0.118 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 313 W
Pulsed Drain Current-Max (IDM) 85 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPW35N60CFD

This table gives cross-reference parts and alternative options found for SPW35N60CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW35N60CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SPW35N60CFDFKSA1 Infineon Technologies AG $8.8874 Power Field-Effect Transistor, 34.1A I(D), 600V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN SPW35N60CFD vs SPW35N60CFDFKSA1

SPW35N60CFD Related Parts

SPW35N60CFD Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for SPW35N60CFD is a 5x6mm pad with a 0.5mm thermal via, as specified in the Infineon application note AN2013-01-001.

  • To ensure reliability, follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure the device is operated within the specified junction temperature range (TJ) of -40°C to 175°C.

  • The maximum allowed voltage slew rate for SPW35N60CFD is 10kV/μs, as specified in the datasheet. Exceeding this rate may lead to device failure.

  • Yes, SPW35N60CFD can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.

  • The recommended gate resistor value for SPW35N60CFD is between 10Ω and 100Ω, depending on the specific application requirements and switching frequency.

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