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Part Details for SQ1922AEEH-T1_GE3 by Vishay Intertechnologies
Overview of SQ1922AEEH-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SQ1922AEEH-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
28AH5239
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Newark | Mosfet, Aec-Q101, Dual N-Ch, 20V, 0.85A, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:850Ma, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.21Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:2V, Rohs Compliant: Yes |Vishay SQ1922AEEH-T1_GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7395 |
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$0.2870 / $0.4630 | Buy Now |
|
DISTI #
SQ1922AEEH-T1_GE3
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Avnet Americas | Transistor MOSFET Array Dual N-Channel 20V 0.85A 6-Pin SC-70 - Tape and Reel (Alt: SQ1922AEEH-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.1230 | Buy Now |
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DISTI #
78-SQ1922AEEH-T1_GE3
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Mouser Electronics | MOSFETs Dual Nch 20V Vds SOT-363 RoHS: Compliant | 144651 |
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$0.1220 / $0.4400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks | 0 |
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$0.1319 | Buy Now |
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DISTI #
SQ1922AEEH-T1_GE3
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EBV Elektronik | (Alt: SQ1922AEEH-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQ1922AEEH-T1_GE3
SQ1922AEEH-T1_GE3 CAD Models
SQ1922AEEH-T1_GE3 Part Data Attributes
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SQ1922AEEH-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQ1922AEEH-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 0.85A I(D), 20V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, SOT-363, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-70, SOT-363, 6 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 0.2 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.85 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 3.3 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 22 ns | |
| Turn-on Time-Max (ton) | 30 ns |