Part Details for SQ2351ES-T1-GE3 by Vishay Siliconix
Overview of SQ2351ES-T1-GE3 by Vishay Siliconix
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Renewable Energy
Telecommunications
Communication and Networking
Part Details for SQ2351ES-T1-GE3
SQ2351ES-T1-GE3 CAD Models
SQ2351ES-T1-GE3 Part Data Attributes
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SQ2351ES-T1-GE3
Vishay Siliconix
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Datasheet
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SQ2351ES-T1-GE3
Vishay Siliconix
SQ2351ES Automotive P-Channel 20 V (D-S) 175 °C MOSFET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 1.8 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.168 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12.7 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for SQ2351ES-T1-GE3
This table gives cross-reference parts and alternative options found for SQ2351ES-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQ2351ES-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SQ2351ES-T1_GE3 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.168ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SQ2351ES-T1-GE3 vs SQ2351ES-T1_GE3 |
SSF2315 | Power Field-Effect Transistor, 3A I(D), 20V, 0.158ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Suzhou Good-Ark Electronics Co Ltd | SQ2351ES-T1-GE3 vs SSF2315 |