Part Details for SQ7415AENW-T1_GE3 by Vishay Intertechnologies
Overview of SQ7415AENW-T1_GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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Price & Stock for SQ7415AENW-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75AH9257
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Newark | Mosfet, P-Ch, 60V, 16A, 175Deg C, 53W Rohs Compliant: Yes |Vishay SQ7415AENW-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 60V, 0.065OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 84 |
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$0.5750 / $1.1500 | Buy Now |
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Chip1Cloud | MOSFET P-CH 60V 16A PPAK1212-8 | 2500 |
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RFQ | |
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Chips Pulse Industry Limited | PowerPAK-1212-8 Pre-ordered transistors RoHS Purchase Online, Ship Immediately | 576 |
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$0.5909 / $0.7561 | Buy Now |
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DISTI #
3470686RL
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element14 Asia-Pacific | MOSFET, P-CH, 60V, 16A, 175DEG C, 53W RoHS: Compliant Min Qty: 100 Container: Reel | 1390 |
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$0.3801 / $0.6452 | Buy Now |
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DISTI #
3470686
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element14 Asia-Pacific | MOSFET, P-CH, 60V, 16A, 175DEG C, 53W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 1390 |
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$0.3801 / $1.0179 | Buy Now |
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DISTI #
3470686
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Farnell | MOSFET, P-CH, 60V, 16A, 175DEG C, 53W RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 2 Days Container: Cut Tape | 1390 |
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$0.3768 / $1.1055 | Buy Now |
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DISTI #
3470686RL
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Farnell | MOSFET, P-CH, 60V, 16A, 175DEG C, 53W RoHS: Compliant Min Qty: 100 Lead time: 53 Weeks, 2 Days Container: Reel | 1390 |
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$0.3768 / $0.6151 | Buy Now |
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Perfect Parts Corporation | 3360 |
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RFQ |
Part Details for SQ7415AENW-T1_GE3
SQ7415AENW-T1_GE3 CAD Models
SQ7415AENW-T1_GE3 Part Data Attributes
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SQ7415AENW-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SQ7415AENW-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 105 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 53 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 68 ns | |
| Turn-on Time-Max (ton) | 28 ns |