Part Details for SQA405CEJW-T1_GE3 by Vishay Intertechnologies
Overview of SQA405CEJW-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SQA405CEJW-T1_GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQA405CEJW-T1_GE3
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Avnet Americas | Transistor MOSFET P-Channel 40V 9A 6-Pin PowerPAK SC-70W - Tape and Reel (Alt: SQA405CEJW-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.1881 | Buy Now |
DISTI #
78-SQA405CEJW-T1_GE3
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Mouser Electronics | MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET RoHS: Compliant | 1992 |
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$0.1730 / $0.4600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.1383 | Buy Now |
DISTI #
SQA405CEJW-T1_GE3
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Avnet Americas | Transistor MOSFET P-Channel 40V 9A 6-Pin PowerPAK SC-70W - Tape and Reel (Alt: SQA405CEJW-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.1881 | Buy Now |
DISTI #
SQA405CEJW-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -40V, -9A, Idm: -36A Min Qty: 3000 | 0 |
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$0.1710 | RFQ |
Part Details for SQA405CEJW-T1_GE3
SQA405CEJW-T1_GE3 CAD Models
SQA405CEJW-T1_GE3 Part Data Attributes:
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SQA405CEJW-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQA405CEJW-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 9A I(D), 40V, 0.0395ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70W, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SC-70W, 6 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 9.11 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.0395 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 105 pF | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 13.6 W | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 60 ns | |
Turn-on Time-Max (ton) | 23 ns |