Datasheets
SQA405CEJW-T1_GE3 by:

Power Field-Effect Transistor, 9A I(D), 40V, 0.0395ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70W, 6 PIN

Part Details for SQA405CEJW-T1_GE3 by Vishay Intertechnologies

Overview of SQA405CEJW-T1_GE3 by Vishay Intertechnologies

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Price & Stock for SQA405CEJW-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQA405CEJW-T1_GE3
Avnet Americas Transistor MOSFET P-Channel 40V 9A 6-Pin PowerPAK SC-70W - Tape and Reel (Alt: SQA405CEJW-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1881
$0.1881 Buy Now
DISTI # 78-SQA405CEJW-T1_GE3
Mouser Electronics MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET RoHS: Compliant 1992
  • 1 $0.4600
  • 10 $0.3930
  • 100 $0.2940
  • 500 $0.2310
  • 1,000 $0.2080
  • 3,000 $0.1760
  • 9,000 $0.1730
$0.1730 / $0.4600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 0
  • 3,000 $0.1383
$0.1383 Buy Now
DISTI # SQA405CEJW-T1_GE3
Avnet Americas Transistor MOSFET P-Channel 40V 9A 6-Pin PowerPAK SC-70W - Tape and Reel (Alt: SQA405CEJW-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1881
$0.1881 Buy Now
DISTI # SQA405CEJW-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -40V, -9A, Idm: -36A Min Qty: 3000 0
  • 3,000 $0.1710
$0.1710 RFQ

Part Details for SQA405CEJW-T1_GE3

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SQA405CEJW-T1_GE3 Part Data Attributes:

SQA405CEJW-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQA405CEJW-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 9A I(D), 40V, 0.0395ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70W, 6 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SC-70W, 6 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 9.11 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.0395 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 105 pF
JESD-30 Code S-PDSO-N6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 13.6 W
Pulsed Drain Current-Max (IDM) 36 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 23 ns

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