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Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98AH5967
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Newark | N-Channel 20-V (D-S) 175C Mosfet Rohs Compliant: No |Vishay SQA410EJ-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2180 / $0.2770 | Buy Now |
DISTI #
SQA410EJ-T1_GE3
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Avnet Americas | Trans MOSFET N-CH 20V 7.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SQA410EJ-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.2178 / $0.2766 | Buy Now |
DISTI #
781-SQA410EJ-T1_GE3
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Mouser Electronics | MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified RoHS: Compliant | 201242 |
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$0.2010 / $0.4700 | Buy Now |
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Future Electronics | MOSFET N-CH 20V 7.8A PPAK SC70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.1970 / $0.2100 | Buy Now |
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Future Electronics | MOSFET N-CH 20V 7.8A PPAK SC70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel | 0Reel |
|
$0.1970 / $0.2100 | Buy Now |
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SQA410EJ-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SQA410EJ-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.8A I(D), 20V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, S-PDSO-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 7.8 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |