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Part Details for SQD10950E_GE3 by Vishay Intertechnologies
Overview of SQD10950E_GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SQD10950E_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AH2725
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Newark | Mosfet, N-Channel 250 V Dpak To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:11.5A, Drain Source Voltage Vds:250V, On Resistance Rds(On):0.1342Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Vishay SQD10950E_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6621 |
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$0.6880 / $0.7510 | Buy Now |
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DISTI #
SQD10950E_GE3
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Avnet Americas | Transistor MOSFET N-CH 250V 11.5A 3-Pin TO-252AA (Alt: SQD10950E_GE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 25 Weeks, 0 Days | 0 |
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$0.5646 / $0.7172 | Buy Now |
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DISTI #
34AH2725
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Avnet Americas | Transistor MOSFET N-CH 250V 11.5A 3-Pin TO-252AA - Product that comes on tape, but is not reeled (Alt: 34AH2725) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 590 Partner Stock |
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$0.9910 / $1.5000 | Buy Now |
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DISTI #
78-SQD10950E_GE3
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Mouser Electronics | MOSFET N-CHANNEL 250-V (D-S) 175C MOSFET RoHS: Compliant | 2526 |
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$0.5230 / $1.3900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 28 Weeks | 0 |
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$0.5510 | Buy Now |
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Bristol Electronics | 1970 |
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RFQ | ||
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DISTI #
SQD10950E_GE3
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EBV Elektronik | Transistor MOSFET N-CH 250V 11.5A 3-Pin TO-252AA (Alt: SQD10950E_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQD10950E_GE3
SQD10950E_GE3 CAD Models
SQD10950E_GE3 Part Data Attributes
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SQD10950E_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQD10950E_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11.5A I(D), 250V, 0.162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 11.5 A | |
| Drain-source On Resistance-Max | 0.162 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 16 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 40 ns | |
| Turn-on Time-Max (ton) | 30 ns |