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Transistors / Power Field-Effect Transistors / SQD25N15-52_GE3
Datasheets
SQD25N15-52_GE3 by:

Power Field-Effect Transistor, 25A I(D), 150V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SQD25N15-52_GE3 by Vishay Intertechnologies

Overview of SQD25N15-52_GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SQD25N15-52_GE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK5821
Newark Mosfet, N-Ch, 150V, 25A, To-252Aa Rohs Compliant: Yes |Vishay SQD25N15-52_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 11976
  • 1 $3.8600
  • 10 $3.2400
  • 25 $3.0600
  • 50 $2.8400
  • 100 $2.6200
  • 250 $2.4800
$2.4800 / $3.8600 Buy Now
DISTI # SQD25N15-52_GE3
Avnet Americas Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD25N15-52_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,000 $2.3770
  • 4,000 $2.3008
  • 8,000 $2.2245
  • 12,000 $2.1344
  • 16,000 $2.0651
  • 20,000 $1.9681
  • 200,000 $1.8711
$1.8711 / $2.3770 Buy Now
DISTI # SQD25N15-52-GE3
Avnet Americas Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD25N15-52-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # 781-SQD25N15-52_GE3
Mouser Electronics MOSFET 150V 25A 136W AEC-Q101 Qualified RoHS: Compliant 5862
  • 1 $3.7100
  • 10 $3.1200
  • 25 $2.9400
  • 100 $2.5200
  • 250 $2.3800
  • 500 $2.2400
  • 1,000 $1.9200
  • 2,000 $1.7900
  • 4,000 $1.7300
$1.7300 / $3.7100 Buy Now
Future Electronics Single N-Channel 150 V 0.136 Ohm 51 nC 107 W Silicon SMT Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $1.7600
$1.7600 Buy Now
DISTI # SQD25N15-52_GE3
Avnet Americas Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD25N15-52_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,000 $2.3770
  • 4,000 $2.3008
  • 8,000 $2.2245
  • 12,000 $2.1344
  • 16,000 $2.0651
  • 20,000 $1.9681
  • 200,000 $1.8711
$1.8711 / $2.3770 Buy Now
DISTI # SQD25N15-52-GE3
Avnet Americas Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD25N15-52-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # SQD25N15-52-GE3
TME Transistor: N-MOSFET, unipolar, 150V, 16A, 107W, DPAK,TO252 Min Qty: 1 0
  • 1 $2.1600
  • 5 $1.9400
  • 25 $1.7200
  • 100 $1.5400
  • 500 $1.4300
$1.4300 / $2.1600 RFQ
Chip 1 Exchange INSTOCK 598000
RFQ
Chip1Cloud MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK T/R 11800
RFQ
DISTI # SQD25N15-52_GE3
EBV Elektronik Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK (Alt: SQD25N15-52_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 3929240
element14 Asia-Pacific MOSFET, N-CH, 150V, 25A, TO-252AA RoHS: Compliant Min Qty: 1 Container: Cut Tape 11976
  • 1 $3.9195
  • 10 $3.1002
  • 100 $2.5097
  • 500 $2.3620
  • 1,000 $2.0299
$2.0299 / $3.9195 Buy Now
DISTI # 3929240RL
element14 Asia-Pacific MOSFET, N-CH, 150V, 25A, TO-252AA RoHS: Compliant Min Qty: 100 Container: Reel 11976
  • 100 $2.5097
  • 500 $2.3620
  • 1,000 $2.0299
$2.0299 / $2.5097 Buy Now
DISTI # 3929240RL
Farnell MOSFET, N-CH, 150V, 25A, TO-252AA RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel 11976
  • 100 $2.4293
  • 500 $2.2915
  • 1,000 $1.9659
$1.9659 / $2.4293 Buy Now
DISTI # 3929240
Farnell MOSFET, N-CH, 150V, 25A, TO-252AA RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Cut Tape 11976
  • 1 $4.2575
  • 10 $3.0053
  • 100 $2.4293
  • 500 $2.2915
  • 1,000 $1.9659
$1.9659 / $4.2575 Buy Now
Wuhan P&S 150V,52m��,25A,N-Channel Power MOSFET Min Qty: 1 460000
  • 1 $6.2223
  • 100 $2.0746
  • 500 $1.9190
  • 1,000 $1.8667
$1.8667 / $6.2223 Buy Now

Part Details for SQD25N15-52_GE3

SQD25N15-52_GE3 CAD Models

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SQD25N15-52_GE3 Part Data Attributes:

Parametric Data
SQD25N15-52_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQD25N15-52_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 25A I(D), 150V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 101 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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