Part Details for SQD50N04-4M5L-GE3 by Vishay Intertechnologies
Overview of SQD50N04-4M5L-GE3 by Vishay Intertechnologies
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SQD50N04-4M5L-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQD50N04-4M5L-GE3
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TTI | MOSFET N-CHANNEL 40-V (D-S) 175C MOSF RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.9800 / $1.0600 | Buy Now |
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DISTI #
SQD50N04-4M5L-GE3
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TME | Transistor: N-MOSFET, unipolar, 40V, 50A, 136W, DPAK,TO252 Min Qty: 1 | 0 |
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$1.2100 / $1.7400 | RFQ |
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DISTI #
SQD50N04-4M5L-GE3
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EBV Elektronik | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK (Alt: SQD50N04-4M5L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Buy Now | |
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DISTI #
1869880
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Farnell | MOSFET,N CH,W DIODE,40V,50A,TO-252 RoHS: Compliant Min Qty: 5 Lead time: 3 Weeks, 1 Days Container: Each | 0 |
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$0.8783 / $1.4659 | Buy Now |
Part Details for SQD50N04-4M5L-GE3
SQD50N04-4M5L-GE3 CAD Models
SQD50N04-4M5L-GE3 Part Data Attributes
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SQD50N04-4M5L-GE3
Vishay Intertechnologies
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Datasheet
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SQD50N04-4M5L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 151 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |