Datasheets
SQD50P06-15L_GE3 by:

Power Field-Effect Transistor, 50A I(D), 60V, 0.0155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SQD50P06-15L_GE3 by Vishay Intertechnologies

Results Overview of SQD50P06-15L_GE3 by Vishay Intertechnologies

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SQD50P06-15L_GE3 Information

SQD50P06-15L_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SQD50P06-15L_GE3

Part # Distributor Description Stock Price Buy
DISTI # SQD50P06-15L-GE3
Avnet Americas Trans MOSFET P-CH 60V 50A 3-Pin(2+Tab) TO-252AA - Tape and Reel (Alt: SQD50P06-15L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # SQD50P06-15L_GE3
Avnet Asia Trans MOSFET P-CH 60V 50A 3-Pin(2+Tab) TO-252AA (Alt: SQD50P06-15L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days 10000
RFQ
DISTI # C1S803603924243
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 1853
  • 1 $3.0900
  • 10 $2.1200
  • 50 $2.0100
  • 100 $1.5700
  • 500 $1.3300
$1.3300 / $3.0900 Buy Now
DISTI # SQD50P06-15L_GE3
EBV Elektronik Trans MOSFET PCH 60V 50A 3Pin2Tab TO252AA (Alt: SQD50P06-15L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days EBV - 2000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2000 2000
  • 2,000 $1.2600
$1.2600 Buy Now

Part Details for SQD50P06-15L_GE3

SQD50P06-15L_GE3 CAD Models

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SQD50P06-15L_GE3 Part Data Attributes

SQD50P06-15L_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQD50P06-15L_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 50A I(D), 60V, 0.0155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

SQD50P06-15L_GE3 Related Parts

SQD50P06-15L_GE3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SQD50P06-15L_GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 91000).

  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) such as thermal grease or thermal tape, and design the heat sink to provide adequate airflow.

  • The maximum allowed power dissipation for the SQD50P06-15L_GE3 is dependent on the ambient temperature and the thermal resistance of the system. Refer to the datasheet for the power dissipation curves and thermal resistance values.

  • Yes, the SQD50P06-15L_GE3 is a qualified device for high-reliability applications. It is manufactured and tested to meet the requirements of the automotive and industrial markets.

  • To protect the SQD50P06-15L_GE3 from ESD, handle the device in an ESD-controlled environment, use ESD-protective packaging and handling materials, and ensure that all personnel handling the device are grounded.

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