Part Details for SQJ403EEP-T1_GE3 by Vishay Intertechnologies
Overview of SQJ403EEP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Price & Stock for SQJ403EEP-T1_GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQJ403EEP-T1_GE3
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Avnet Americas | Trans MOSFET P-CH 30V 30A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ403EEP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ |
Part Details for SQJ403EEP-T1_GE3
SQJ403EEP-T1_GE3 CAD Models
SQJ403EEP-T1_GE3 Part Data Attributes
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SQJ403EEP-T1_GE3
Vishay Intertechnologies
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Datasheet
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SQJ403EEP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |