There are no models available for this part yet.
Overview of SQJ418EP-T2_GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for SQJ418EP-T2_GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SQJ418EP-T2_GE3
|
Avnet Americas | - Tape and Reel (Alt: SQJ418EP-T2_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
|
$0.3808 | Buy Now | |
DISTI #
78-SQJ418EP-T2_GE3
|
Mouser Electronics | MOSFETs 100V Vds 20V Vgs PowerPAK SO-8L RoHS: Compliant | 0 |
|
$0.3880 / $0.4270 | Order Now |
CAD Models for SQJ418EP-T2_GE3 by Vishay Intertechnologies
Part Data Attributes for SQJ418EP-T2_GE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
SO-8L, 4 PIN
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
25 Weeks
|
Avalanche Energy Rating (Eas)
|
65 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
48 A
|
Drain-source On Resistance-Max
|
0.014 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
70 pF
|
JESD-30 Code
|
R-PSSO-G4
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
68 W
|
Pulsed Drain Current-Max (IDM)
|
160 A
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
60 ns
|
Turn-on Time-Max (ton)
|
50 ns
|