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Part Details for SQJ431EP-T1_GE3 by Vishay Intertechnologies
Overview of SQJ431EP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SQJ431EP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
96Y9632
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Newark | Mosfet, Aec-Q101, P-Ch, -200V, -12A, Channel Type:P Channel, Drain Source Voltage Vds:-200V, Continuous Drain Current Id:-12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-10V, Gate Source Threshold Voltage Max:-3V Rohs Compliant: Yes |Vishay SQJ431EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 396 |
|
$1.3200 / $1.8400 | Buy Now |
|
DISTI #
76Y1533
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Newark | P-Channel 200-V (D-S) 175C Mosfet |Vishay SQJ431EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8170 / $0.9770 | Buy Now |
|
DISTI #
96Y9632
|
Avnet Americas | Trans MOSFET P-CH -200V -12A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 96Y9632) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 396 Partner Stock |
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$1.3700 / $1.8400 | Buy Now |
|
DISTI #
SQJ431EP-T1_GE3
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Avnet Americas | Trans MOSFET P-CH -200V -12A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ431EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.7506 / $0.8105 | Buy Now |
|
DISTI #
SQJ431EP-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -200V, -12A, Idm: -40A, 27W Min Qty: 1 | 0 |
|
$0.9900 / $1.7900 | RFQ |
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DISTI #
SQJ431EP-T1_GE3
|
Avnet Asia | Trans MOSFET P-CH -200V -12A 8-Pin PowerPAK SO T/R (Alt: SQJ431EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days | 15000 |
|
RFQ | |
|
|
CHIPMALL.COM LIMITED | 200V 12A 213m��@1A,4V 83W 3.5V@250uA P Channel PowerPAK-SO-8 MOSFETs ROHS | 5304 |
|
$0.9951 / $1.9313 | Buy Now |
Part Details for SQJ431EP-T1_GE3
SQJ431EP-T1_GE3 CAD Models
SQJ431EP-T1_GE3 Part Data Attributes
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SQJ431EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ431EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SO-8L, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks, 1 Day | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.221 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |