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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75AH9218
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Newark | Mosfet, P-Ch, 60V, 36A, Powerpak So, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQJ457EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8828 |
|
$0.5850 / $0.6910 | Buy Now |
DISTI #
38AH2535
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Newark | P-Channel 60-V (D-S) 175C Mosfet |Vishay SQJ457EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3780 / $0.4460 | Buy Now |
DISTI #
20AC4031
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Newark | P-Channel 60-V (D-S) 175C Mosfet |Vishay SQJ457EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3780 / $0.4460 | Buy Now |
DISTI #
SQJ457EP-T1_GE3
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Avnet Americas | Trans MOSFET P-CH 60V 36A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ457EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 3000 |
|
$0.3339 / $0.3733 | Buy Now |
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Chip 1 Exchange | INSTOCK | 15000 |
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RFQ | |
DISTI #
SQJ457EP-T1_GE3
|
Avnet Asia | Trans MOSFET P-CH 60V 36A 8-Pin PowerPAK SO T/R (Alt: SQJ457EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days | 0 |
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$0.6785 / $0.7645 | Buy Now |
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CHIPMALL.COM LIMITED | 60V 36A 0.025@10V,36A 22W 2.5V@250uA 1 Piece P-Channel PowerPAK-SO-8L MOSFETs ROHS | 3974 |
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$0.4201 / $0.7687 | Buy Now |
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SQJ457EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ457EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SO-8L, 4 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Date Of Intro | 2016-07-19 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 64.8 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 275 pF | |
JESD-30 Code | R-PSSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 87 ns | |
Turn-on Time-Max (ton) | 35 ns |