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Part Details for SQJ488EP-T1_GE3 by Vishay Intertechnologies
Results Overview of SQJ488EP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SQJ488EP-T1_GE3 Information
SQJ488EP-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SQJ488EP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SQJ488EP-T1_GE3
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Avnet Americas | Trans MOSFET N-CH 100V 42A 8-Pin SO T/R - Tape and Reel (Alt: SQJ488EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.6005 / $0.6414 | Buy Now |
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DISTI #
SQJ488EP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 42A 8-Pin SO T/R - Tape and Reel (Alt: SQJ488EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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DISTI #
SQJ488EP-T1_GE3
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Avnet Asia | Trans MOSFET N-CH 100V 42A 8-Pin SO T/R (Alt: SQJ488EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SQJ488EP-T1_GE3
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EBV Elektronik | Trans MOSFET NCH 100V 42A 8Pin SO TR (Alt: SQJ488EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQJ488EP-T1_GE3
SQJ488EP-T1_GE3 CAD Models
SQJ488EP-T1_GE3 Part Data Attributes
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SQJ488EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ488EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SO-8L, 4 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 25 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 1.68 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.021 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 37 ns | |
| Turn-on Time-Max (ton) | 22 ns |