Part Details for SQJ850EP-T1_GE3 by Vishay Intertechnologies
Overview of SQJ850EP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SQJ850EP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
37T8257
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Newark | Mosfet, n Channel, w Diode,60V,24A, popak8L, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:24A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQJ850EP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$1.0800 / $1.8500 | Buy Now |
|
DISTI #
SQJ850EP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 60V 24A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ850EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ | |
|
DISTI #
SQJ850EP-T1_GE3
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Avnet Americas | Trans MOSFET N-CH 60V 24A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ850EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.7537 | Buy Now |
|
DISTI #
78-SQJ850EP-T1_GE3
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Mouser Electronics | MOSFETs RECOMMENDED ALT SQJ464EP-T1_GE3 RoHS: Compliant | 2555 |
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$0.7240 / $1.7300 | Buy Now |
Part Details for SQJ850EP-T1_GE3
SQJ850EP-T1_GE3 CAD Models
SQJ850EP-T1_GE3 Part Data Attributes
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SQJ850EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ850EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 24A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |