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Transistors / Power Field-Effect Transistors / SQJ960EP-T1_GE3
Datasheets
SQJ960EP-T1_GE3 by:

Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

Part Details for SQJ960EP-T1_GE3 by Vishay Intertechnologies

Overview of SQJ960EP-T1_GE3 by Vishay Intertechnologies

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Price & Stock for SQJ960EP-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 76Y1553
Newark Dual N-Channel 60-V (D-S) 175C Mosfe |Vishay SQJ960EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.0800
  • 4,000 $0.9670
  • 6,000 $0.9320
  • 10,000 $0.8970
$0.8970 / $1.0800 Buy Now
DISTI # SQJ960EP-T1-GE3
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ960EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
DISTI # SQJ960EP-T1_GE3
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ960EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.8601
$0.8601 Buy Now
DISTI # 78-SQJ960EP-T1_GE3
Mouser Electronics MOSFETs 60V 8A 34W AEC-Q101 Qualified RoHS: Compliant 79715
  • 1 $2.0900
  • 10 $1.7400
  • 100 $1.3800
  • 250 $1.2800
  • 500 $1.1600
  • 1,000 $0.9900
  • 3,000 $0.9410
  • 6,000 $0.9050
  • 9,000 $0.8840
$0.8840 / $2.0900 Buy Now
Future Electronics Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.9250
$0.9250 Buy Now
Future Electronics Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 3,000 $0.9250
$0.9250 Buy Now

Part Details for SQJ960EP-T1_GE3

SQJ960EP-T1_GE3 CAD Models

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SQJ960EP-T1_GE3 Part Data Attributes

Parametric Data
SQJ960EP-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQJ960EP-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 12 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

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