Datasheets
SQJB60EP-T1_GE3 by:

Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN

Part Details for SQJB60EP-T1_GE3 by Vishay Intertechnologies

Overview of SQJB60EP-T1_GE3 by Vishay Intertechnologies

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Applications Space Technology Aerospace and Defense Energy and Power Systems

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Price & Stock for SQJB60EP-T1_GE3

Part # Distributor Description Stock Price Buy
DISTI # 20AC3998
Newark Dual N-Channel 60-V (D-S) 175C Mosfe |Vishay SQJB60EP-T1_GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.5930
  • 4,000 $0.5330
  • 6,000 $0.5140
  • 10,000 $0.5020
$0.5020 / $0.5930 Buy Now
DISTI # 99Y9674
Newark Mosfet, Aec-Q101, Dual N-Ch, Powerpakso, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:30A, Continuous Drain Current Id P Channel:30A Rohs Compliant: Yes |Vishay SQJB60EP-T1_GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $1.3500
  • 10 $1.1100
  • 25 $1.0400
  • 50 $0.9680
  • 100 $0.8950
$0.8950 / $1.3500 Buy Now
DISTI # SQJB60EP-T1_GE3
Avnet Americas Trans MOSFET Array Dual N-CH 60V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJB60EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4656
$0.4656 Buy Now
DISTI # 78-SQJB60EP-T1_GE3
Mouser Electronics MOSFETs N Ch 60Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant 27281
  • 1 $1.2600
  • 10 $1.0100
  • 100 $0.8000
  • 500 $0.6780
  • 1,000 $0.5530
  • 3,000 $0.5090
  • 6,000 $0.4900
  • 9,000 $0.4720
$0.4720 / $1.2600 Buy Now
Future Electronics Trans MOSFET N-CH 60V 30A Automotive 5-Pin(4+Tab) PowerPAK SO RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks Container: Reel 9000
Reel
  • 3,000 $0.4800
  • 6,000 $0.4650
  • 9,000 $0.4550
$0.4550 / $0.4800 Buy Now
DISTI # C1S803619902075
Chip1Stop MOSFET 3000
  • 3,000 $0.5180
$0.5180 Buy Now

Part Details for SQJB60EP-T1_GE3

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SQJB60EP-T1_GE3 Part Data Attributes

SQJB60EP-T1_GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SQJB60EP-T1_GE3 Vishay Intertechnologies Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 25 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 26.5 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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