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Power Field-Effect Transistor, 35A I(D), 300V, 0.097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQM35N30-97_GE3
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Avnet Americas | Trans MOSFET N-CH 300V 35A 3-Pin TO-263 T/R - Bulk (Alt: SQM35N30-97_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
|
$1.8622 / $2.3657 | Buy Now |
DISTI #
78-SQM35N30-97_GE3
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Mouser Electronics | MOSFET N-Chnl 300-V (D-S) AEC-Q101 Qualified RoHS: Compliant | 0 |
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$1.7900 / $3.6900 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 | 0 |
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$1.8400 | Buy Now |
DISTI #
SQM35N30-97_GE3
|
Avnet Americas | Trans MOSFET N-CH 300V 35A 3-Pin TO-263 T/R - Bulk (Alt: SQM35N30-97_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Bulk | 0 |
|
$1.8622 / $2.3657 | Buy Now |
DISTI #
SQM35N30-97_GE3
|
EBV Elektronik | Trans MOSFET N-CH 300V 35A 3-Pin TO-263 T/R (Alt: SQM35N30-97_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
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SQM35N30-97_GE3
Vishay Intertechnologies
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Datasheet
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SQM35N30-97_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 35A I(D), 300V, 0.097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 54 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.097 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |