SQM50N04-4M1_GE3
Description: Power Field-Effect Transistor, 50A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Overview of SQM50N04-4M1_GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for SQM50N04-4M1_GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 76Y1579
Newark N-Channel 40-V (D-S) 175C Mosfet |Vishay SQM50N04-4M1_GE3 RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $1.6500
  • 1,000 $1.4400
  • 2,500 $1.2900
$1.2900 / $1.6500 Buy Now
DISTI # SQM50N04-4M1-GE3
Avnet Americas Trans MOSFET N-CH 40V 50A 3-Pin TO-263 - Tape and Reel (Alt: SQM50N04-4M1-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
DISTI # SQM50N04-4M1_GE3
Avnet Americas Trans MOSFET N-CH 40V 50A 3-Pin TO-263 - Tape and Reel (Alt: SQM50N04-4M1_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
  • 800 $1.2125
$1.2125 Buy Now
DISTI # 781-SQM50N04-4M1_GE3
Mouser Electronics MOSFETs 40V 50A 150W AEC-Q101 Qualified RoHS: Compliant 470
  • 1 $2.8500
  • 100 $2.7800
  • 250 $2.5700
  • 500 $2.4000
  • 800 $1.3200
  • 2,400 $1.2500
  • 4,800 $1.2000
$1.2000 / $2.8500 Buy Now
DISTI # SQM50N04-4M1_GE3
EBV Elektronik Trans MOSFET N-CH 40V 50A 3-Pin TO-263 (Alt: SQM50N04-4M1_GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SQM50N04-4M1_GE3 by Vishay Intertechnologies
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Part Data Attributes for SQM50N04-4M1_GE3 by Vishay Intertechnologies

SQM50N04-4M1_GE3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
180 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
50 A
Drain-source On Resistance-Max
0.0041 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
200 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. SQM50N04-4M1_GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 50A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
    VS

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