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Part Details for SSM3J168F,LF by Toshiba America Electronic Components
Results Overview of SSM3J168F,LF by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
SSM3J168F,LF Information
SSM3J168F,LF by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM3J168F,LF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM3J168F,LF
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Avnet Americas | - Tape and Reel (Alt: SSM3J168F,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0719 / $0.0734 | Buy Now |
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Vyrian | Transistors | 67968 |
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RFQ |
Part Details for SSM3J168F,LF
SSM3J168F,LF CAD Models
SSM3J168F,LF Part Data Attributes
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SSM3J168F,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3J168F,LF
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.4 A | |
| Drain-source On Resistance-Max | 1.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.6 W | |
| Pulsed Drain Current-Max (IDM) | 0.8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SSM3J168F,LF Frequently Asked Questions (FAQ)
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The recommended land pattern for SSM3J168F,LF is a rectangular pad with a size of 1.5mm x 0.8mm, with a solder mask opening of 1.2mm x 0.5mm. The pad should be centered on the component and have a non-solder mask defined (NSMD) pad shape.
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To handle thermal considerations for SSM3J168F,LF, ensure good thermal conduction by using a thermal pad on the PCB, and consider using a heat sink or thermal interface material (TIM) if the component will be operating at high temperatures or high currents.
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The maximum operating temperature range for SSM3J168F,LF is -40°C to 125°C, with a storage temperature range of -40°C to 150°C.
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To ensure the reliability of SSM3J168F,LF in high-reliability applications, follow proper PCB design and assembly guidelines, use a robust soldering process, and consider using a conformal coating to protect the component from environmental factors.
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The equivalent series resistance (ESR) of SSM3J168F,LF is typically around 0.5 ohms, but this value can vary depending on the specific application and operating conditions.