Datasheets
SSM3J168F,LXHF by: Toshiba America Electronic Components

Small Signal Field-Effect Transistor

Part Details for SSM3J168F,LXHF by Toshiba America Electronic Components

Results Overview of SSM3J168F,LXHF by Toshiba America Electronic Components

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SSM3J168F,LXHF Information

SSM3J168F,LXHF by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SSM3J168F,LXHF

Part # Distributor Description Stock Price Buy
DISTI # SSM3J168F,LXHF
Avnet Americas Transistor MOSFET P-Channel 60V 400mA 3-Pin SOT-346 - Tape and Reel (Alt: SSM3J168F,LXHF) COO: Thailand RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # SSM3J168F,LF(T
Avnet Asia Transistor MOSFET P-Channel 60V 400mA 3-Pin SOT-346 (Alt: SSM3J168F,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for SSM3J168F,LXHF

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SSM3J168F,LXHF Part Data Attributes

SSM3J168F,LXHF Toshiba America Electronic Components
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SSM3J168F,LXHF Toshiba America Electronic Components Small Signal Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOT-346, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 36 Weeks
Samacsys Manufacturer Toshiba
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.4 A
Drain-source On Resistance-Max 1.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5.5 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.6 W
Pulsed Drain Current-Max (IDM) 0.8 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

SSM3J168F,LXHF Frequently Asked Questions (FAQ)

  • Toshiba provides a recommended PCB layout in their application note AN2018041, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).

  • The SSM3J168F,LXHF has a high power dissipation rating, so proper thermal management is crucial. Toshiba recommends using a heat sink with a thermal resistance of 10°C/W or less, and ensuring good airflow around the device. Additionally, the device should be mounted on a multi-layer PCB with a thermal via structure to dissipate heat effectively.

  • The SSM3J168F,LXHF has an operating temperature range of -40°C to 150°C, but Toshiba recommends derating the device's power dissipation above 125°C to ensure reliable operation.

  • To ensure EMC, Toshiba recommends following proper PCB layout and design guidelines, using a metal shield or enclosure, and implementing filtering and shielding techniques to minimize electromagnetic radiation. Additionally, the device should be placed at least 10mm away from other components to minimize electromagnetic interference.

  • Toshiba recommends storing the SSM3J168F,LXHF in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. The device should be stored in its original packaging or an anti-static bag to prevent damage from electrostatic discharge.

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