Part Details for SSM3J168F,LXHF by Toshiba America Electronic Components
Results Overview of SSM3J168F,LXHF by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SSM3J168F,LXHF Information
SSM3J168F,LXHF by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SSM3J168F,LXHF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM3J168F,LXHF
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Avnet Americas | Transistor MOSFET P-Channel 60V 400mA 3-Pin SOT-346 - Tape and Reel (Alt: SSM3J168F,LXHF) COO: Thailand RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
SSM3J168F,LF(T
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Avnet Asia | Transistor MOSFET P-Channel 60V 400mA 3-Pin SOT-346 (Alt: SSM3J168F,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
Part Details for SSM3J168F,LXHF
SSM3J168F,LXHF CAD Models
SSM3J168F,LXHF Part Data Attributes
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SSM3J168F,LXHF
Toshiba America Electronic Components
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Datasheet
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SSM3J168F,LXHF
Toshiba America Electronic Components
Small Signal Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOT-346, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 36 Weeks | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.4 A | |
Drain-source On Resistance-Max | 1.55 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.5 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.6 W | |
Pulsed Drain Current-Max (IDM) | 0.8 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
SSM3J168F,LXHF Frequently Asked Questions (FAQ)
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Toshiba provides a recommended PCB layout in their application note AN2018041, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
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The SSM3J168F,LXHF has a high power dissipation rating, so proper thermal management is crucial. Toshiba recommends using a heat sink with a thermal resistance of 10°C/W or less, and ensuring good airflow around the device. Additionally, the device should be mounted on a multi-layer PCB with a thermal via structure to dissipate heat effectively.
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The SSM3J168F,LXHF has an operating temperature range of -40°C to 150°C, but Toshiba recommends derating the device's power dissipation above 125°C to ensure reliable operation.
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To ensure EMC, Toshiba recommends following proper PCB layout and design guidelines, using a metal shield or enclosure, and implementing filtering and shielding techniques to minimize electromagnetic radiation. Additionally, the device should be placed at least 10mm away from other components to minimize electromagnetic interference.
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Toshiba recommends storing the SSM3J168F,LXHF in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. The device should be stored in its original packaging or an anti-static bag to prevent damage from electrostatic discharge.