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Power Field-Effect Transistor, 4A I(D), 30V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK7962
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Newark | Mosfet, P-Ch, 30V, 4A, Sot-23F, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:- Rohs Compliant: Yes |Toshiba SSM3J334R, LF(T Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 755 |
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$0.1440 / $0.4930 | Buy Now |
DISTI #
86AK6420
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Newark | Mosfet, P-Ch, 30V, 4A, Sot-23F Rohs Compliant: Yes |Toshiba SSM3J334R, LF(T Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0610 / $0.1060 | Buy Now |
DISTI #
SSM3J334R
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TME | Transistor: P-MOSFET, unipolar, -30V, -4A, 1W, SOT23F Min Qty: 5 | 2310 |
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$0.0910 / $0.1500 | Buy Now |
DISTI #
STDMOS1121
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Rutronik | P-CH 30V 4A 105mOhm at 4,5V RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Stock DE - 3000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.0636 / $0.0825 | Buy Now |
DISTI #
SSM3J334R,LF(T
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Avnet Asia | Trans MOSFET P-CH 30V 4A 3-Pin SOT-23F (Alt: SSM3J334R,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
SSM3J334R,LF(T
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EBV Elektronik | Trans MOSFET P-CH 30V 4A 3-Pin SOT-23F (Alt: SSM3J334R,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 108000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 87000 |
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$0.1075 / $0.1161 | Buy Now |
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SSM3J334R,LF(T
Toshiba America Electronic Components
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Datasheet
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Compare Parts:
SSM3J334R,LF(T
Toshiba America Electronic Components
Power Field-Effect Transistor, 4A I(D), 30V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SOT-23F, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.071 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 40 pF | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |