Datasheets
SSM3J340R,LF(T by: Toshiba America Electronic Components

Power Field-Effect Transistor, 4A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SSM3J340R,LF(T by Toshiba America Electronic Components

Overview of SSM3J340R,LF(T by Toshiba America Electronic Components

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Price & Stock for SSM3J340R,LF(T

Part # Distributor Description Stock Price Buy
DISTI # SSM3J340R,LF(T
Avnet Asia Transistor MOSFET P-Channel 30V 4A 3-Pin SOT-23F (Alt: SSM3J340R,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
  • 3,000 $0.1520
  • 6,000 $0.1500
  • 9,000 $0.1481
  • 15,000 $0.1462
  • 30,000 $0.1426
  • 75,000 $0.1392
  • 150,000 $0.1359
$0.1359 / $0.1520 Buy Now
CHIPMALL.COM LIMITED   13860
  • 60 $0.1358
  • 200 $0.0938
  • 1,500 $0.0852
  • 3,000 $0.0941
$0.0852 / $0.1358 Buy Now
DISTI # SSM3J340R,LF(T
EBV Elektronik Transistor MOSFET P-Channel 30V 4A 3-Pin SOT-23F (Alt: SSM3J340R,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 4 Days EBV - 0
Buy Now

Part Details for SSM3J340R,LF(T

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SSM3J340R,LF(T Part Data Attributes

SSM3J340R,LF(T Toshiba America Electronic Components
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SSM3J340R,LF(T Toshiba America Electronic Components Power Field-Effect Transistor, 4A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SOT-23F, 3 PIN
Reach Compliance Code unknown
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.073 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 75 pF
JESD-30 Code R-PDSO-F3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Pulsed Drain Current-Max (IDM) 12 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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