Part Details for SSM3J355R,LF by Toshiba America Electronic Components
Overview of SSM3J355R,LF by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SSM3J355R,LF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM3J355RLFCT-ND
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DigiKey | MOSFET P-CH 20V 6A SOT23F Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
28765 In Stock |
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$0.0612 / $0.3900 | Buy Now |
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DISTI #
SSM3J355R,LF
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Avnet Americas | Small Low ON Resistance MOSFET P-Channel 20V 6A 3-Pin SOT-23F T/R - Tape and Reel (Alt: SSM3J355R,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 90000 |
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$0.0627 / $0.0750 | Buy Now |
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DISTI #
757-SSM3J355RLF
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Mouser Electronics | MOSFET LowON Res MOSFET ID=-6A VDSS=-20V RoHS: Compliant | 251871 |
|
$0.0610 / $0.3900 | Buy Now |
Part Details for SSM3J355R,LF
SSM3J355R,LF CAD Models
SSM3J355R,LF Part Data Attributes
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SSM3J355R,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM3J355R,LF
Toshiba America Electronic Components
Power Field-Effect Transistor, 6A I(D), 20V, 0.0388ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOT-23F, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.0388 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 94 pF | |
| JESD-30 Code | R-PDSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |