Part Details for SSM6J801R,LF(T by Toshiba America Electronic Components
Overview of SSM6J801R,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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SSM6J801R | Toshiba Electronic Devices & Storage Corporation | MOSFET, P-ch, -20 V, -6.0 A, 0.0325 Ohm@4.5V, TSOP6F |
Price & Stock for SSM6J801R,LF(T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSM6J801R,LF(T
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Avnet Asia | TOSSSM6J801R,LF(T MOSFET (Alt: SSM6J801R,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 36 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
C1S751201227863
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Chip1Stop | MOSFET RoHS: Not Compliant pbFree: No Container: Cut Tape | 1775 |
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$0.0922 / $0.1780 | Buy Now |
Part Details for SSM6J801R,LF(T
SSM6J801R,LF(T CAD Models
SSM6J801R,LF(T Part Data Attributes
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SSM6J801R,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM6J801R,LF(T
Toshiba America Electronic Components
Power Field-Effect Transistor, 6A I(D), 20V, 0.0325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TSOP6F, 6 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.0325 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 99 pF | |
JESD-30 Code | R-PDSO-F6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |