Part Details for SSP2N60A by Fairchild Semiconductor Corporation
Overview of SSP2N60A by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SSP2N60A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-SSP2N60A-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 807 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
9000 In Stock |
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$0.3700 | Buy Now |
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Rochester Electronics | SSP2N60A - 2A, 600V, 5ohm, N-Channel Power MOSFET, TO-220AB RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 9000 |
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$0.3191 / $0.3754 | Buy Now |
Part Details for SSP2N60A
SSP2N60A CAD Models
SSP2N60A Part Data Attributes
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SSP2N60A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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SSP2N60A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 131 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SSP2N60A
This table gives cross-reference parts and alternative options found for SSP2N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSP2N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFP45N06LE | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | SSP2N60A vs RFP45N06LE |
| SSS2N90 | Power Field-Effect Transistor, 1.8A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SSP2N60A vs SSS2N90 |
| SSS7N60A | Power Field-Effect Transistor, 4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | SSP2N60A vs SSS7N60A |
| RFP30N06LE | 30A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SSP2N60A vs RFP30N06LE |
| RFP4N06 | 4A, 60V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SSP2N60A vs RFP4N06 |
| RFP2N20L | Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SSP2N60A vs RFP2N20L |
| RFP2N20 | Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SSP2N60A vs RFP2N20 |
| RFG50N06LE | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | SSP2N60A vs RFG50N06LE |
| SSH5N90 | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | SSP2N60A vs SSH5N90 |
| SPP30N03 | Power Field-Effect Transistor, 30A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SSP2N60A vs SPP30N03 |