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Transistors Power Field-Effect Transistors SSS2N60B

Transistors
SSS2N60B
Description: Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Overview of SSS2N60B by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Price & Stock for SSS2N60B by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-SSS2N60B-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 1567 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 3094
In Stock
  • 1,567 $0.1900
$0.1900 Buy Now
Rochester Electronics SSS2N60B - 2A, 600V, 5ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 3094
  • 1 $0.1934
  • 25 $0.1895
  • 100 $0.1818
  • 500 $0.1741
  • 1,000 $0.1644
$0.1644 / $0.1934 Buy Now

CAD Models for SSS2N60B by Fairchild Semiconductor Corporation
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Part Data Attributes for SSS2N60B by Fairchild Semiconductor Corporation
Parametric Data

SSS2N60B
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-220AB
Package Description
TO-220F, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
120 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
23 W
Pulsed Drain Current-Max (IDM)
6 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. SSS2N60B
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
    VS

Alternate Parts for SSS2N60B

This table gives cross-reference parts and alternative options found for SSS2N60B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSS2N60B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments SSS2N60B vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SSS2N60B vs IPB80N06S2LH5ATMA1
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics SSS2N60B vs STH8NA60FI
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc SSS2N60B vs IXFH14N80
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc SSS2N60B vs IXFH7N90Q
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics SSS2N60B vs STW80NF55-06
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics SSS2N60B vs STP19N06
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics SSS2N60B vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation SSS2N60B vs NDB705BEL
STD12N05-1 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 STMicroelectronics SSS2N60B vs STD12N05-1

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