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N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STB155N3LH6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STB155N3LH6
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Avnet Americas | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$1.0767 / $1.1314 | Buy Now |
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STMicroelectronics | N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 | 0 |
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$1.2600 / $3.4000 | Buy Now |
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Bristol Electronics | 437 |
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RFQ | ||
DISTI #
STB155N3LH6
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Avnet Silica | Trans MOSFET NCH 30V 80A 3Pin2Tab DPAK TR (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | Silica - 1000 |
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Buy Now | |
DISTI #
STB155N3LH6
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EBV Elektronik | Trans MOSFET NCH 30V 80A 3Pin2Tab DPAK TR (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STB155N3LH6
STMicroelectronics
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Datasheet
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STB155N3LH6
STMicroelectronics
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252 | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 525 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STB155N3LH6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB155N3LH6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPB03N03LB | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | STB155N3LH6 vs IPB03N03LB |
IRHSLNA58Z60PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | STB155N3LH6 vs IRHSLNA58Z60PBF |
IRHSLNA53Z60PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN | STB155N3LH6 vs IRHSLNA53Z60PBF |
IPD70N03S4L-04 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | STB155N3LH6 vs IPD70N03S4L-04 |
IPD70N03S4L04ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | STB155N3LH6 vs IPD70N03S4L04ATMA1 |