Datasheets
STB155N3LH6 by: STMicroelectronics

N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package

Part Details for STB155N3LH6 by STMicroelectronics

Results Overview of STB155N3LH6 by STMicroelectronics

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Applications Industrial Automation

STB155N3LH6 Information

STB155N3LH6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STB155N3LH6

Part # Distributor Description Stock Price Buy
DISTI # STB155N3LH6
Avnet Americas Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1314
  • 2,000 $1.1243
  • 4,000 $1.1035
  • 6,000 $1.0834
  • 8,000 $1.0767
$1.0767 / $1.1314 Buy Now
STMicroelectronics N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 0
  • 1 $3.4000
  • 10 $2.2300
  • 100 $1.5500
  • 250 $1.5500
  • 500 $1.2600
$1.2600 / $3.4000 Buy Now
Bristol Electronics   437
RFQ
DISTI # STB155N3LH6
Avnet Silica Trans MOSFET NCH 30V 80A 3Pin2Tab DPAK TR (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 1000
Buy Now
DISTI # STB155N3LH6
EBV Elektronik Trans MOSFET NCH 30V 80A 3Pin2Tab DPAK TR (Alt: STB155N3LH6) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STB155N3LH6

STB155N3LH6 CAD Models

STB155N3LH6 Part Data Attributes

STB155N3LH6 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB155N3LH6 STMicroelectronics N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 525 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB155N3LH6

This table gives cross-reference parts and alternative options found for STB155N3LH6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB155N3LH6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB03N03LB Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN STB155N3LH6 vs IPB03N03LB
IRHSLNA58Z60PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN STB155N3LH6 vs IRHSLNA58Z60PBF
IRHSLNA53Z60PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-2, 3 PIN STB155N3LH6 vs IRHSLNA53Z60PBF
IPD70N03S4L-04 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN STB155N3LH6 vs IPD70N03S4L-04
IPD70N03S4L04ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 STB155N3LH6 vs IPD70N03S4L04ATMA1

STB155N3LH6 Related Parts

STB155N3LH6 Frequently Asked Questions (FAQ)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to minimize thermal resistance.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a heat sink, thermal interface material, and ensuring good airflow around the device.

  • The maximum allowed voltage on the gate-source pin (Vgs) is ±20V, as specified in the datasheet. Exceeding this voltage can damage the device.

  • To protect the device from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging. Additionally, consider adding ESD protection circuits or devices in the design.

  • The recommended gate drive voltage for optimal performance is typically between 10V to 15V, depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.

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