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Transistors / Power Field-Effect Transistors / STB18N60M2
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STB18N60M2 by: STMicroelectronics

N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package

Part Details for STB18N60M2 by STMicroelectronics

Overview of STB18N60M2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for STB18N60M2

Part # Distributor Description Stock Price Buy
DISTI # 06X3547
Newark Hv Mosfet Mdmesh |Stmicroelectronics STB18N60M2 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-13933-1-ND
DigiKey MOSFET N-CH 600V 13A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2776
In Stock
  • 1 $2.3700
  • 10 $1.9670
  • 100 $1.5658
  • 500 $1.3249
  • 1,000 $1.1241
  • 2,000 $1.0679
  • 5,000 $1.0278
  • 10,000 $0.9938
$0.9938 / $2.3700 Buy Now
DISTI # STB18N60M2
Avnet Americas Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1806
  • 2,000 $1.1567
  • 4,000 $1.1329
  • 6,000 $1.1090
  • 8,000 $1.0852
  • 10,000 $1.0613
  • 100,000 $1.0375
$1.0375 / $1.1806 Buy Now
DISTI # 511-STB18N60M2
Mouser Electronics MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 RoHS: Compliant 703
  • 1 $2.5200
  • 10 $2.1000
  • 100 $1.6700
  • 250 $1.5400
  • 500 $1.4100
  • 1,000 $1.1200
  • 2,000 $1.0600
  • 5,000 $1.0200
$1.0200 / $2.5200 Buy Now
STMicroelectronics N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a D2PAK package RoHS: Compliant Min Qty: 1 703
  • 1 $2.3900
  • 10 $1.9900
  • 100 $1.5900
  • 250 $1.4600
  • 500 $1.3300
$1.3300 / $2.3900 Buy Now
Future Electronics STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.0800
  • 2,000 $1.0600
  • 3,000 $1.0600
  • 4,000 $1.0400
$1.0400 / $1.0800 Buy Now
Future Electronics STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.0800
  • 2,000 $1.0600
  • 3,000 $1.0600
  • 4,000 $1.0400
$1.0400 / $1.0800 Buy Now
Future Electronics STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 300 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.2500
  • 5 $1.1900
  • 25 $1.1300
  • 50 $1.1100
  • 150 $1.0400
$1.0400 / $1.2500 Buy Now
Future Electronics STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.0800
  • 2,000 $1.0600
  • 3,000 $1.0600
  • 4,000 $1.0400
$1.0400 / $1.0800 Buy Now
DISTI # STB18N60M2
Avnet Americas Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1806
  • 2,000 $1.1567
  • 4,000 $1.1329
  • 6,000 $1.1090
  • 8,000 $1.0852
  • 10,000 $1.0613
  • 100,000 $1.0375
$1.0375 / $1.1806 Buy Now
DISTI # STB18N60M2
Avnet Americas Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.1806
  • 2,000 $1.1567
  • 4,000 $1.1329
  • 6,000 $1.1090
  • 8,000 $1.0852
  • 10,000 $1.0613
  • 100,000 $1.0375
$1.0375 / $1.1806 Buy Now
DISTI # STB18N60M2
Avnet Silica Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 3 Days Silica - 3000
Buy Now
DISTI # STB18N60M2
EBV Elektronik Trans MOSFET N-CH 600V 13A 3-Pin D2PAK T/R (Alt: STB18N60M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now

Part Details for STB18N60M2

STB18N60M2 CAD Models

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STB18N60M2 Part Data Attributes

Parametric Data
STB18N60M2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STB18N60M2 STMicroelectronics N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 52 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STB18N60M2

This table gives cross-reference parts and alternative options found for STB18N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK14E65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STB18N60M2 vs TK14E65W5
TK14C65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STB18N60M2 vs TK14C65W5
STP18N60M2 N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package STMicroelectronics STB18N60M2 vs STP18N60M2
STI18N60M2 N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in I2PAK package STMicroelectronics STB18N60M2 vs STI18N60M2
IXKH13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation STB18N60M2 vs IXKH13N60C5
SIHD14N60E-GE3 Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Vishay Intertechnologies STB18N60M2 vs SIHD14N60E-GE3
IXKH13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc STB18N60M2 vs IXKH13N60C5
IXKP13N60C5 Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Littelfuse Inc STB18N60M2 vs IXKP13N60C5
IPB60R280C6 Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG STB18N60M2 vs IPB60R280C6
TK14G65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components STB18N60M2 vs TK14G65W5

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