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N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
69AH2671
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Newark | Mosfet, N-Ch, 800V, 16A, 150Deg C, 190W Rohs Compliant: Yes |Stmicroelectronics STB23N80K5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 664 |
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$3.0900 / $5.4000 | Buy Now |
DISTI #
STB23N80K5
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Avnet Americas | Trans MOSFET N-CH 800V 16A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB23N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$2.1583 / $2.2933 | Buy Now |
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STMicroelectronics | N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 | 3444 |
|
$2.2500 / $4.8000 | Buy Now |
DISTI #
STB23N80K5
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Avnet Silica | Trans MOSFET N-CH 800V 16A 3-Pin D2PAK T/R (Alt: STB23N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
STB23N80K5
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EBV Elektronik | Trans MOSFET N-CH 800V 16A 3-Pin D2PAK T/R (Alt: STB23N80K5) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 800V 16A D2PAK | 4280 |
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$2.5076 / $3.7614 | Buy Now |
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STB23N80K5
STMicroelectronics
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Datasheet
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STB23N80K5
STMicroelectronics
N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1.5 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |