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Part Details for STB33N65M2 by STMicroelectronics
Overview of STB33N65M2 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STB33N65M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STB33N65M2
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Avnet Americas | Trans MOSFET N-CH 650V 24A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB33N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.7458 / $1.8549 | Buy Now |
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STMicroelectronics | N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 | 4559 |
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$1.9100 / $4.5000 | Buy Now |
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DISTI #
STB33N65M2
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Avnet Silica | Trans MOSFET N-CH 650V 24A 3-Pin D2PAK T/R (Alt: STB33N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
STB33N65M2
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EBV Elektronik | Trans MOSFET N-CH 650V 24A 3-Pin D2PAK T/R (Alt: STB33N65M2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | Extremely low gate charge | MOSFET N-CH 650V 24A D2PAK | 10816 |
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$2.0300 / $3.0450 | Buy Now |
Part Details for STB33N65M2
STB33N65M2 CAD Models
STB33N65M2 Part Data Attributes
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STB33N65M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB33N65M2
STMicroelectronics
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 780 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |